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Günter Reuscher

Observed names: G Reuscher, G. Reuscher, Reuscher, G., Reuscher, Günter
ORCID: 0009-0008-6748-1052
Observed ORCID: 0009-0008-6748-1052
OpenAlex ID: A5000435312
Injection and detection of a spin-polarized current in a light-emitting diode
1999 · R. Fiederling, M. Keim, et al. · Nature · 1,862
Laser diodes based on beryllium-chalcogenides
1997 · A. Waag, F. Fischer, et al. · Applied Physics Letters · 133
Novel beryllium containing II–VI compounds: basic properties and potential applications
1998 · A. Waag, Th. Litz, et al. · Journal of Crystal Growth · 91
Electron spin manipulation using semimagnetic resonant tunneling diodes
2001 · Th. Gruber, M. Keim, et al. · Applied Physics Letters · 83
CdSe fractional-monolayer active region of molecular beam epitaxy grown green ZnSe-based lasers
1999 · S. V. Ivanov, A. A. Toropov, et al. · Applied Physics Letters · 80
ZnSe-based blue-green lasers with a short-period superlattice waveguide
1998 · S. Ivanov, A. Toropov, et al. · Applied Physics Letters · 40
Epitaxy and magnetotransport properties of the diluted magnetic semiconductor p-Be(1−x)MnxTe
2001 · L. Hansen, D. Ferrand, et al. · Applied Physics Letters · 34
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Resonant inelastic soft x-ray scattering of Be chalcogenides
2006 · D. Eich, O. Fuchs, et al. · Physical Review B · 31
Reduction of the extended defect density in molecular beam epitaxy grown ZnSe based II-VI heterostructures by the use of a BeTe buffer layer
1998 · F. Fischer, M. Keller, et al. · Journal of Applied Physics · 31
Kinetics of radiative recombination in strongly excited ZnSe/BeTe superlattices with a type-II band alignment
1999 · A. A. Maksimov, S. V. Zaitsev, et al. · Applied Physics Letters · 26
BeCdSe as a ternary alloy for blue-green optoelectronic applications
2001 · S. V. Ivanov, O. V. Nekrutkina, et al. · Applied Physics Letters · 24
MBE growth and properties of bulk BeCdSe alloys and digital (BeSe:CdSe)/ZnSe quantum wells
2000 · S.V. Ivanov, A.A. Toropov, et al. · Journal of Crystal Growth · 23
Resonant electron tunneling in ZnSe/BeTe double-barrier, single-quantum-well heterostructures
1996 · U. Lunz, M. Keim, et al. · Journal of Applied Physics · 19
Kinetics of Radiative Recombination in Strongly Excited ZnSe/BeTe Superlattices
2000 · A.A. Maksimov, S.V. Zaitsev, et al. · physica status solidi (b) · 16
BeCdSe/(Be,Zn)Se Quantum Well as a New Active Region for Blue-Green II-VI Lasers and Light-Emitting Diodes
2000 · S.V. Ivanov, A.A. Toropov, et al. · physica status solidi (a) · 15
Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers
1998 · S. V. Ivanov, A. A. Toropov, et al. · Semiconductors · 14
Demonstration of electrical spin injection into a semiconductor using a semimagnetic spin aligner
2000 · G. Schmidt, R. Fiederling, et al. · Superlattices and Microstructures · 13
Cross-sectional atomic force microscopy of ZnMgSSe- and BeMgZnSe-based laser diodes
1999 · A. V. Ankudinov, A. N. Titkov, et al. · Applied Physics Letters · 13
Blue-green ZnSe lasers with a new type of active region
1999 · S. V. Ivanov, A. A. Toropov, et al. · Semiconductors · 13
MBE-grown laser diodes based on beryllium containing II–VI semiconductors
1999 · H.-J Lugauer, M Keim, et al. · Journal of Crystal Growth · 10
CdSe monolayers, embedded in BeTe: analysis of interface vibrations by Raman spectroscopy
2001 · V Wagner, J Wagner, et al. · Applied Surface Science · 9
High response photodiodes based on Be-chalcogenides
1999 · J Siess, G Reuscher, et al. · Journal of Crystal Growth · 9
Improved degradation stability of blue-green II-VI light-emitting diodes with excluded nitrogen-doped ZnSe-based layers
2001 · N. Yu. Gordeev, S. V. Ivanov, et al. · Semiconductors · 8
Photoemission study of the Na/ZnSe(100) interface
1999 · Zhonghui Chen, D. Eich, et al. · Physical review. B, Condensed matter · 8
Resonant tunneling in CdTe/ Cd1−x Mgx Te double-barrier single-quantum-well heterostructures
1996 · G. Reuscher, M. Keim, et al. · Physical review. B, Condensed matter · 8
Works count: 61
Citation count: 2,670
H-index: 15
I10-index: 20
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