Reduction of the extended defect density in molecular beam epitaxy grown ZnSe based II-VI heterostructures by the use of a BeTe buffer layer
Year: 1998
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.368234
Authors: F. Fischer, M. Keller, T. Gerhard, T. Behr, T. Litz, H. J. Lugauer, M. Keim, G. Reuscher, T. Baron, A. Waag, G. Landwehr
Institution: University of Würzburg
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1978237259