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Benjamin D. Briggs
Observed names:
B. Briggs,
B. D. Briggs,
B.D. Briggs,
Benjamin Briggs,
Benjamin D Briggs,
Briggs, Benjamin David
show all 6
Institution:
Applied Materials (United States)
Observed institutions:
United States Air Force Research Laboratory,
State University of New York,
IBM (United States),
Applied Materials (United States),
University at Albany, State University of New York,
IBM Research - Thomas J. Watson Research Center,
IMEC,
Rome Laboratory,
IBM Research - Albany
show all 9
OpenAlex ID:
A5000569144
Electromechanical robustness of monolayer graphene with extreme bending
2010
·
Benjamin D. Briggs
, Bhaskar Nagabhirava
, et al.
·
Applied Physics Letters
·
56
Bilayer Graphene System: Current-Induced Reliability Limit
2010
·
Tianhua Yu
, Eun-Kyu Lee
, et al.
·
IEEE Electron Device Letters
·
36
Bilayer Graphene/Copper Hybrid On-Chip Interconnect: A Reliability Study
2010
·
Tianhua Yu
, Eun-Kyu Lee
, et al.
·
IEEE Transactions on Nanotechnology
·
33
Comparison of key fine-line BEOL metallization schemes for beyond 7 nm node
2017
·
T. Nogami
, X. Zhang
, et al.
·
Symposium on VLSI Technology
·
32
Cobalt/copper composite interconnects for line resistance reduction in both fine and wide lines
2017
·
T. Nogami
, R. Patlolla
, et al.
·
IEEE International Interconnect Technology Conference (IITC)
·
26
Spintronic majority gates
2015
·
I. P. Radu
, O. Zografos
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
26
Fully aligned via integration for extendibility of interconnects to beyond the 7 nm node
2017
·
Benjamin D. Briggs
, C. B. Peethala
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
22
Through-Cobalt Self Forming Barrier (tCoSFB) for Cu/ULK BEOL: A novel concept for advanced technology nodes
2015
·
Takeshi Nogami
, Benjamin D Briggs
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
19
Influence of Copper on the Switching Properties of Hafnium Oxide-Based Resistive Memory
2011
·
B.D. Briggs
, S.M. Bishop
, et al.
·
MRS Proceedings
·
19
Influence of the plasma oxidation power on the switching properties of Al/CuxO/Cu memristive devices
2012
·
N.R. McDonald
, S.M. Bishop
, et al.
·
Solid-State Electronics
·
16
Ion implantation synthesized copper oxide-based resistive memory devices
2011
·
S. M. Bishop
, H. Bakhru
, et al.
·
Applied Physics Letters
·
16
Reliability study of bilayer graphene - material for future transistor and interconnect
2010
·
Tianhua Yu
, Eun-Kyu Lee
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
14
Defect detection strategies and process partitioning for single-expose EUV patterning
2018
·
Luciana Meli
, Karen Petrillo
, et al.
·
Journal of Micro/Nanopatterning Materials and Metrology
·
13
Electron Transport Across Cu/Ta(O)/Ru(O)/Cu Interfaces in Advanced Vertical Interconnects
2018
·
Nicholas A. Lanzillo
, Benjamin D. Briggs
, et al.
·
Computational Materials Science
·
12
Effect of crystallinity on endurance and switching behavior of HfOx-based resistive memory devices
2012
·
Jihan O. Capulong
, Benjamin D. Briggs
, et al.
·
IEEE International Integrated Reliability Workshop final report
·
10
Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
2014
·
B.D. Briggs
, S.M. Bishop
, et al.
·
Thin Solid Films
·
8
Bilayer Graphene System: Transport and Reliability
2010
·
Tianhua Yu
, Eun-Kyu Lee
, et al.
·
ECS Transactions
·
8
PDF
Intrinsic reliability of local interconnects for N7 and beyond
2015
·
K. Croes
, A. Lesniewska
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
5
Ion implantation synthesis and conduction of tantalum oxide resistive memory layers
2012
·
Seann M. Bishop
, Benjamin D. Briggs
, et al.
·
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
·
4
Challenges and Innovations in Dual Damascene Polymer RDL with 2 μm Pitch and Beyond
2024
·
Benjamin D. Briggs
, Ryan Ley
, et al.
·
IEEE Electronic Components and Technology Conference (ECTC)
·
3
Defect detection strategies and process partitioning for SE EUV patterning (Conference Presentation)
2018
·
Shinichiro Kawakami
, Luciana Meli
, et al.
·
Extreme Ultraviolet (EUV) Lithography
·
3
Development of a silicon oxide-based resistive memory device using a spin-on hydrogen silsesquioxane precursor
2012
·
Zachary P. Rice
, Benjamin D. Briggs
, et al.
·
Journal of materials research/Pratt's guide to venture capital sources
·
3
Fabrication and Characterization of Copper Oxide Resistive Memory Devices
2011
·
S.M. Bishop
, B.D. Briggs
, et al.
·
MRS Proceedings
·
3
Metal Wet Recess Challenges and Solutions for beyond 7nm Fully Aligned Via Integration
2021
·
B. Peethala
, D. Sil
, et al.
·
IEEE International Interconnect Technology Conference (IITC)
·
2
Comparison of HfOx-based resistive memory devices with crystalline and amorphous active layers
2011
·
Benjamin D. Briggs
, Seann M. Bishop
, et al.
·
International Semiconductor Device Research Symposium
·
2
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Works count:
36
Citation count:
396
H-index:
13
I10-index:
15
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