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H. Ghoneim
Observed names:
Ghoneim, Hesham,
H Ghoneim,
Hesham Ghoneim
Institution:
IBM Research - Zurich
Observed institution:
IBM Research - Zurich
OpenAlex ID:
A5000836209
InAs–Si Nanowire Heterojunction Tunnel FETs
2012
·
K. E. Moselund
, H. Schmid
, et al.
·
IEEE Electron Device Letters
·
146
Si–InAs heterojunction Esaki tunnel diodes with high current densities
2010
·
M. T. Björk
, H. Schmid
, et al.
·
Applied Physics Letters
·
106
InAs-Si heterojunction nanowire tunnel diodes and tunnel FETs
2012
·
H. Riel
, K. E. Moselund
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
58
Silicon Nanowire Tunnel FETs: Low-Temperature Operation and Influence of High- $k$ Gate Dielectric
2011
·
K. E. Moselund
, M. T. Bjork
, et al.
·
IEEE Transactions on Electron Devices
·
57
Comparison of VLS grown Si NW tunnel FETs with different gate stacks
2009
·
K. E. Moselund
, H. Ghoneim
, et al.
·
European Solid-State Device Research Conference
·
47
Measurement of Thermoelectric Properties of Single Semiconductor Nanowires
2013
·
S. Karg
, P. Mensch
, et al.
·
Journal of Electronic Materials
·
37
Fabrication of vertical InAs-Si heterojunction tunnel field effect transistors
2011
·
H. Schmid
, K. E. Moselund
, et al.
·
Conference digest
·
31
In situ doping of catalyst-free InAs nanowires
2012
·
Hesham Ghoneim
, Philipp Mensch
, et al.
·
Nanotechnology
·
30
Solid-state diffusion as an efficient doping method for silicon nanowires and nanowire field effect transistors
2010
·
K E Moselund
, H Ghoneim
, et al.
·
Nanotechnology
·
26
Suppression of ambipolar behavior in metallic source/drain metal-oxide-semiconductor field-effect transistors
2009
·
H. Ghoneim
, J. Knoch
, et al.
·
Applied Physics Letters
·
21
VLS-grown silicon nanowire tunnel FET
2009
·
K. E. Moselund
, H. Ghoneim
, et al.
·
Conference digest
·
13
Interface engineering for the suppression of ambipolar behavior in Schottky-barrier MOSFETs
2009
·
H. Ghoneim
, J. Knoch
, et al.
·
Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
·
12
From All-Si Nanowire TFETs Towards III-V TFETs
2012
·
Ghoneim, Hesham
·
Infoscience (Ecole Polytechnique Fédérale de Lausanne)
·
1
VLS-grown silicon nanowires — Dopant deactivation and tunnel FETs
2010
·
M. T. Bjork
, K. E. Moselund
, et al.
·
Silicon Nanoelectronics Workshop (SNW)
·
1
Measurement of thermoelectric properties of indium arsenide nanowires
2013
·
Philipp Mensch
, Siegfried Karg
, et al.
·
Verhandlungen der Deutschen Physikalischen Gesellschaft
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Works count:
17
Citation count:
586
H-index:
12
I10-index:
12
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