Silicon Nanowire Tunnel FETs: Low-Temperature Operation and Influence of High- $k$ Gate Dielectric
Year: 2011
Type: article
Authors: K. E. Moselund, M. T. Bjork, H. Schmid, H. Ghoneim, S. Karg, E. Lortscher, W. Riess, H. Riel
Institution: IBM Research - Zurich
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: Lunds Universitet
OpenAlex ID: W2115362020