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T. Lowrey
Observed names:
T Lowrey,
T.A. Lowrey,
Tyler A. Lowrey,
Tyler Lowrey
Observed institutions:
Micron (United States),
Intel (United States),
STMicroelectronics (Italy)
OpenAlex ID:
A5000909667
OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications
2002
·
S. Lai
, T. Lowrey
·
Technical digest - International Electron Devices Meeting/Technical digest
·
295
Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications
2004
·
F. Pellizzer
, A. Pirovano
, et al.
·
Symposium on VLSI Technology
·
199
Ovonic unified memory - a high-performance nonvolatile memory technology for stand-alone memory and embedded applications
2005
·
M. Gill
, T. Lowrey
, et al.
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
·
91
Ovonic unified memory - a high-performance nonvolatile memory technology for stand-alone memory and embedded applications
2003
·
M. Gill
, T. Lowrey
, et al.
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
·
74
Nonvolatile, high density, high performance phase-change memory
2002
·
S. Tyson
, G. Wicker
, et al.
·
IEEE Aerospace Conference (AERO)
·
69
Nanocomposite Phase-Change Memory Alloys for Very High Temperature Data Retention
2010
·
Wally Czubatyj
, Stephen J Hudgens
, et al.
·
IEEE Electron Device Letters
·
32
The transistor: an invention becomes a big business
1998
·
C.M. Melliar-Smith
, M.G. Borrus
, et al.
·
Proceedings of the IEEE
·
20
MOCVD $\hbox{Ge}_{3}\hbox{Sb}_{2}\hbox{Te}_{5}$ for PCM Applications
2010
·
J F Zheng
, J Reed
, et al.
·
IEEE Electron Device Letters
·
17
Characteristics of OUM Phase Change Materials and Devices for High Density Nonvolatile Commodity and Embedded Memory Applications
2003
·
Tyler A. Lowrey
, Stephen J. Hudgens
, et al.
·
MRS Proceedings
·
17
Conformal MOCVD Deposition of GeSbTe in High Aspect Ratio Via Structure for Phase Change Memory Applications
2009
·
Jun-Fei Zheng
, Phil Chen
, et al.
·
MRS Proceedings
·
6
MOCVD GST for high speed and low current Phase Change Memory
2011
·
J. F. Zheng
, P. Chen
, et al.
·
Non-Volatile Memory Technology Symposium
·
2
Identifying and Disabling Shorted Electrodes in Field Emission Display - Micron Technology Inc. (Boise, ID) - United States Patent #6034480
2000
·
Jim Browning
, John Lee
, et al.
·
1
Advances in ALD GST Process and Equipment for sub-20nm PCRAM Devices : Precursor delivery, GST Gapfill and Electrical Characterization
2012
·
Zia Karim
, Lin Yang
, et al.
·
ECS Meeting Abstracts
PDF
Deposition and Electrical Characterization of ALD GexSbyTez for Future Applications
2012
·
Yang Liu
, U. Weber
, et al.
Bridge-gap buried digit-line for high density stacked DRAMs
2002
·
H.E. Rhodes
, P.C. Fazan
, et al.
·
IEEE/CPMT International Electronics Manufacturing Technology Symposium
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Works count:
16
Citation count:
823
H-index:
9
I10-index:
9
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