MOCVD $\hbox{Ge}_{3}\hbox{Sb}_{2}\hbox{Te}_{5}$ for PCM Applications
Year: 2010
Type: article
Source: IEEE Electron Device Letters
Authors: J F Zheng, J Reed, C Schell, W Czubatyj, R Sandoval, J Fournier, W Li, W Hunks, C Dennison, S Hudgens, T Lowrey
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1970486000