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Z. F. Krasilnik

Observed names: Krasil'nik, Z. F., Krasilnik, Z, Z F Krasil'nik, Z F Krasilnik, Z Krasil'nik, Z. F. Krasil'nik, Z. F. Krasil’nik, Z. Krasil'nik, Z.F Krasil’nik, Z.F. Krasil'nik, Z.F. Krasilnik, Z.F. Krasil’nik, Zakhary F. Krasil'nik, Zakhary F. Krasilnik, Zakhary Krasilnik, З.Ф. Красильник
ORCID: 0000-0003-4521-9850
Observed ORCID: 0000-0003-4521-9850
OpenAlex ID: A5003124633
Photonic Bound States in the Continuum in Si Structures with the Self‐Assembled Ge Nanoislands
2021 · Sergey A. Dyakov, Margarita V. Stepikhova, et al. · Laser & Photonics Review · 56
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Microscopic Structure of Er-Related Optically Active Centers in Crystalline Silicon
2003 · N. Q. Vinh, H. Przybylińska, et al. · Physical Review Letters · 56
SiGe nanostructures with self-assembled islands for Si-based optoelectronics
2010 · Z F Krasilnik, A V Novikov, et al. · Semiconductor Science and Technology · 40
Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate
2016 · V. Ya. Aleshkin, N. V. Baidus, et al. · Applied Physics Letters · 37
Low-energy photoluminescence of structures with GeSi/Si(001) self-assembled nanoislands
2002 · N. V. Vostokov, Yu. N. Drozdov, et al. · Journal of Experimental and Theoretical Physics Letters · 27
Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures
2018 · B. A. Andreev, K. E. Kudryavtsev, et al. · Scientific Reports · 26
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Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities
2018 · M V Stepikhova, A V Novikov, et al. · Semiconductor Science and Technology · 24
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Observation of Zeeman effect in photoluminescence of Er3+ ion imbedded in crystalline silicon
2001 · N.Q. Vinh, H. Przybylińska, et al. · Physica B Condensed Matter · 20
Erbium doped silicon single- and multilayer structures for light-emitting device and laser applications
2006 · Zakhary F. Krasilnik, Boris A. Andreev, et al. · Journal of materials research/Pratt's guide to venture capital sources · 19
Carrier Recombination, Long‐Wavelength Photoluminescence, and Stimulated Emission in HgCdTe Quantum Well Heterostructures
2019 · Vladimir Rumyantsev, Mikhail Fadeev, et al. · physica status solidi (b) · 18
Electrically pumped InGaAs/GaAs quantum well microdisk lasers directly grown on Si(100) with Ge/GaAs buffer
2017 · N. V. Kryzhanovskaya, E. I. Moiseev, et al. · Optics Express · 18
Realization of photo- and electroluminescent Si:Er structures by the method of sublimation molecular beam epitaxy
2002 · B Andreev, V Chalkov, et al. · Nanotechnology · 17
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Photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer
2006 · M. V. Shaleev, A. V. Novikov, et al. · Applied Physics Letters · 16
Spectral selection of excitonic transitions in a dense array of CdSe/ZnSe quantum dots
2016 · T. V. Shubina, A. V. Rodina, et al. · physica status solidi (b) · 15
Properties of optically active Si:Er and Si1−Ge layers grown by the sublimation MBE method
2000 · M.V. Stepikhova, B.A. Andreev, et al. · Thin Solid Films · 13
Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers
2011 · M. V. Shaleev, A. V. Novikov, et al. · Semiconductors · 11
Si/SiGe: Er/Si structures for laser realization: Theoretical analysis and luminescent studies
2006 · M.V. Stepikhova, L.V. Krasil’nikova, et al. · Journal of Crystal Growth · 11
Smbe Grown Uniformly And Selectively Doped Si:Er Structures For Leds And Lasers
2003 · Z. F. Krasilnik, V. Ya. Aleshkin, et al. · Springer eBooks · 11
Intense photoluminescence from Ge(Si) self-assembled islands embedded in a tensile-strained Si layer
2006 · A V Novikov, M V Shaleev, et al. · Semiconductor Science and Technology · 9
Fabrication of Strain-Relaxed Si1 − x Gex/Si(001) Buffer Layers of Low Surface Roughness
2005 · N. V. Vostokov, Yu. N. Drozdov, et al. · Russian Microelectronics · 9
Photoluminescence excitation spectroscopy of erbium in epitaxially grown Si:Er structures
2004 · A.N. Yablonskiy, M.A.J. Klik, et al. · Optical Materials · 9
Properties of optically active Si:Er and Si1−Ge layers grown by the sublimation MBE method
2001 · M.V. Stepikhova, B.A. Andreev, et al. · Thin Solid Films · 9
Optical properties of strained Si 1– x Ge x and Si 1– x–y Ge x C y heterostructures
2000 · Z F Krasil'nik, A V Novikov · Physics-Uspekhi · 9
Near-infrared stimulated emission from indium-rich InGaN layers grown by plasma-assisted MBE
2021 · D. N. Lobanov, K. E. Kudryavtsev, et al. · Applied Physics Letters · 8
Influence of thermal annealing on the electrical and luminescent properties of heavily Sb-doped Ge/Si(001) layers
2018 · D V Yurasov, A V Novikov, et al. · Semiconductor Science and Technology · 8
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Works count: 116
Citation count: 654
H-index: 14
I10-index: 18
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