Work

Properties of optically active Si:Er and Si1−Ge layers grown by the sublimation MBE method

Year: 2000

Type: article

Source: Thin Solid Films

DOI: 10.1016/s0040-6090(00)00906-8

Authors: M.V. Stepikhova, B.A. Andreev, V.B. Shmagin, Z.F. Krasil'nik, V.P. Kuznetsov, V.G. Shengurov, S.P. Svetlov, W. Jantsch, L. Palmetshofer, H. Ellmer

Institutions: Institute for Physics of Microstructures, Johannes Kepler University of Linz

Language: English

Topic: Photonic and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Russian Foundation for Basic Research

OpenAlex ID: W2051754317

FWCI: 0.833

Cites: 11

Cited by: 13

Related to: 10