Author

Laurent Favede

Observed names: Favede, L., Favède, L.

Institution: United Monolithic Semiconductor (France)

Observed institution: United Monolithic Semiconductor (France)

OpenAlex ID: A5003545863

New qualified industrial AlGaN/GaN HEMT process: Power performances & reliability figures of merit

2012 · D. Floriot, H. Blanck, et al. · European Microwave Integrated Circuit Conference · 19

Industrial GaN FET technology

2010 · Hervé Blanck, James R. Thorpe, et al. · International Journal of Microwave and Wireless Technologies · 18

Highly integrated S and C-band internally-matched Quasi-MMIC power GaN devices

2012 · Marc Camiade, Diane Bouw, et al. · European Microwave Conference (EuMC) · 17

A 47-50 GHz 3 W MMIC Power Amplifier Using 100 nm Gallium Nitride Technology

2022 · Seifeddine Fakhfakh, Guillaume Callet, et al. · European Microwave Integrated Circuits Conference · 3

Scalable Non-Linear Electrical Model for Industrial GaN HEMT Technologies up to 50 GHz

2022 · Guillaume Callet, Seifeddine Fahkfahk, et al. · IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR) · 2

Design of HEMT GaN power amplifiers with wideband control of 2nd harmonic impedances in S-Band

2010 · Chéron, Jérôme, Campovecchio, Michel, et al. · HAL

Spaceborne L Band High Efficiency 65W SSPA Demonstrator for Navigation and Radar Applications

2008 · Villemazet, J.F., Drevon, C., et al. · HAL

Industrial GaInP/GaAs high Power HBT Process for S-Band and L-Band Applications

2007 · H. Blanck, G. Jonsson, et al.

Works count: 8

Citation count: 59

H-index: 3

I10-index: 3