Work

New qualified industrial AlGaN/GaN HEMT process: Power performances & reliability figures of merit

Year: 2012

Type: conference-paper

Source: European Microwave Integrated Circuit Conference

Authors: D. Floriot, H. Blanck, Diane Bouw, F. Bourgeois, M. Camiade, Laurent Favede, Michael Hosch, H. Jung, Benoît Lambert, Allen T. Nguyen, K. Riepe, J. Splettstosse, Hermann Stieglauer, J. Thorpe, U. Meiners

Institutions: United Monolithic Semiconductor (France), United Monolithic Semiconductors (Germany)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W1543099760

FWCI: 6.843

Cites: 2

Cited by: 19

Related to: 10