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Hermann Stieglauer

Observed names: H. Stieglauer, Stieglauer, H., Stieglauer, Hermann
OpenAlex ID: A5022635549
New qualified industrial AlGaN/GaN HEMT process: Power performances & reliability figures of merit
2012 · D. Floriot, H. Blanck, et al. · European Microwave Integrated Circuit Conference · 19
Industrial GaN FET technology
2010 · Hervé Blanck, James R. Thorpe, et al. · International Journal of Microwave and Wireless Technologies · 18
Highly integrated S and C-band internally-matched Quasi-MMIC power GaN devices
2012 · Marc Camiade, Diane Bouw, et al. · European Microwave Conference (EuMC) · 17
An E-band very low noise amplifier with variable gain control on 100 nm GaAs pHEMT technology
2012 · Estelle Byk, Anne Marie Couturier, et al. · European Microwave Integrated Circuit Conference · 12
Impact of Water Content in NMP on Ohmic Contacts in GaN HEMT Technologies
2020 · Alexander Hugger, Aleksandra Dlugolecka, et al. · IEEE Transactions on Semiconductor Manufacturing · 10
0.1µm GaAs pHEMT technology and associated modelling for millimeter wave low noise amplifiers
2012 · C. Teyssandier, Hermann Stieglauer, et al. · European Microwave Integrated Circuit Conference · 9
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier
2022 · Z. Gao, F. Chiocchetta, et al. · IEEE International Reliability Physics Symposium proceedings · 7
Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress
2021 · Zhan Gao, Fabiana Rampazzo, et al. · Microelectronics Reliability · 5
Microbeam SEE Analysis of MIM Capacitors for GaN Amplifiers
2018 · Pawel Kupsc, Arto Javanainen, et al. · IEEE Transactions on Nuclear Science · 5
Demonstration of reproducible Millimeter-wave SMT Chip Scale Package using Hot-via MMICs and Plastic BGA Encapsulation
2022 · A. Bessemoulin, L. Marechal, et al. · European Microwave Conference (EuMC) · 4
On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs
2018 · M. Rzin, A. Chini, et al. · Microelectronics Reliability · 4
GH10-UMS 100 nm GaN Technology
2025 · Samira Bouzid-Driad, Manfred Madel, et al. · European Microwave Integrated Circuits Conference · 3
E-band medium power amplifiers with gain control and output power detector
2013 · A.M. Couturier, Estelle Byk, et al. · European Microwave Integrated Circuit Conference · 3
Industrial GaAs & GaN MMICs Technologies Evaluated for Space Applications
2018 · Leny Baczkowski, Guillaume Callet, et al. · Asia-Pacific Microwave Conference (APMC) · 2
Mobile Electrostatic Carrier (MEC) evaluation for a GaAs wafer backside manufacturing process
2010 · Hermann Stieglauer, J. Nösser, et al. · Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft) · 2
Process Stabilization and Sensitivity Analyses of a Single Recess GaAs pHEMT Process using Device Simulations
2008 · Peter Abele, Michael Schafer, et al. · European Microwave Integrated Circuits Conference · 2
Compact GaN RF-Switches for Power Applications
2022 · Samira Driad, Charles Teyssandier, et al. · European Microwave Integrated Circuits Conference · 1
Thermal Performances of Industrial 0.25-μm GaN Technology for Space Applications
2019 · S. Driad, C. Teyssandier, et al. · European Microwave Integrated Circuits Conference · 1
Transient Short-Channel Effects Induced by Si $\delta$ Doping in Buffer-Free $\mathrm{L}_{\mathrm{G}}=0.15 \mu \mathrm{m}$ AlGaN/GaN HEMTs
2026 · F. De Pieri, C. De Santi, et al. · IEEE International Reliability Physics Symposium proceedings
Transient short-channel effects induced by Si δ-doping in buffer-free LG = 0.15 µm AlGaN/GaN HEMTs
2026 · IEEE International Symposium on Reliability Physics 2026, Carlotto, Andrea, et al. · Underline Science Inc.
Reliability Assessment of Heterogeneous Integrated FOWLP Test Structure Packages for Mixed RF Digital Front-End Application
2024 · Jesse C. Riedl, Vincent Bortolussi, et al. · Electronic System-Integration Technology Conference (ESTC)
Works count: 23
Citation count: 124
H-index: 7
I10-index: 5
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