Work

GH10-UMS 100 nm GaN Technology

Year: 2025

Type: conference-paper

Source: European Microwave Integrated Circuits Conference

DOI: 10.23919/eumic65284.2025.11234341

Authors: Samira Bouzid-Driad, Manfred Madel, Pierre Denis, Linh Trinh-Xuan, Alexandre Bessemoulin, Romain Pecheux, Gregory U'Ren, Rim Arouri, Jonathan Leroy, Valeria Di Giacomo-Brunel, Hermann Stieglauer, Herve Blanck

Institutions: United Monolithic Semiconductor (France), United Monolithic Semiconductors (Germany)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funders: European Space Agency, Ministère de la Défense

OpenAlex ID: W4416249779

FWCI: 7.393

Cites: 12

Cited by: 3

Related to: 10