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Romain Pécheux

Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications
2018 · R. Kabouche, J. Derluyn, et al. · European Microwave Integrated Circuits Conference · 25
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C-doped AlN/GaN HEMTs for High efficiency mmW applications
2018 · R. Pecheux, R. Kabouche, et al. · International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) · 8
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Importance of buffer configuration in GaN HEMTs for high microwave performance and robustness
2017 · R. Pecheux, R. Kabouche, et al. · European Solid-State Device Research Conference · 6
High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation
2019 · Riad Kabouche, Romain Pecheux, et al. · International Journal of High Speed Electronics and Systems · 5
GH10-UMS 100 nm GaN Technology
2025 · Samira Bouzid-Driad, Manfred Madel, et al. · European Microwave Integrated Circuits Conference · 3
Development of setup for on-wafer pulse-to-pulse stability characterization of GaN HEMT transistor in KU-band
2018 · Pécheux, Romain, Ducournau, Guillaume, et al. · HAL · 3
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High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation
2019 · Riad Kabouche, Romain Pecheux, et al. · Selected topics in electornics and systems · 1
GH10-10 Nonlinear Thermal Model Capability & 3W SatCom HPA
2026 · Samira Bouzid-Driad, Frederic Drillet, et al. · Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium
Optimisation de la technologie GaN pour l’amplification de puissance en bande Ku spécifique aux applications senseurs aéroportés
2020 · Romain Pecheux · theses.fr (ABES)
First demonstration of RF GaN-based transistors using buffer-free heterostructures with low trapping effects
2018 · Pecheux, R, Kabouche, Riad, et al. · HAL
Novel Heterostructures for Millimeter-wave GaN devices
2018 · Pecheux, R, Kabouche, Riad, et al. · LillOA (Université de Lille (University Of Lille))
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GaN-based transistors using buffer-free heterostructures for next generation RF devices
2018 · Pécheux, Romain, Kabouche, Riad, et al. · HAL
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GaN HEMTs for millimeter-wave applications:Status and Challenges
2018 · Kabouche, Riad, Pecheux, Romain, et al. · LillOA (Université de Lille (University Of Lille))
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Current status and challenges of GaN millimeter-wave transistors
2018 · Kabouche, Riad, Pecheux, Romain, et al. · HAL
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Key features for high efficiency and highly robust mmW GaN HEMTs
2017 · Pécheux, Romain, Kabouche, Riad, et al. · LillOA (Université de Lille (University Of Lille))
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Low RF losses up to 110 GHz in GaN-on-silicon HEMTs
2017 · Pecheux, R, Kabouche, Riad, et al. · HAL
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Works count: 16
Citation count: 51
H-index: 4
I10-index: 1
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