Author

H. Jung

Observed name: H. JUNG

Institution: United Monolithic Semiconductors (Germany)

Observed institutions: Max Planck Institute for Solid State Research, United Monolithic Semiconductors (Germany), Information and Communications University, Daimler (Germany)

OpenAlex ID: A5113080209

Recombination Enhancement due to Carrier Localization in Quantum Well Structures

1983 · E. O. Göbel, H. Jung, et al. · Physical Review Letters · 235

Temperature dependence of photoluminescence from GaAs single and multiple quantum-well heterostructures grown by molecular-beam epitaxy

1988 · D. S. Jiang, H. Jung, et al. · Journal of Applied Physics · 227

Photoluminescence study of electron-hole recombination across the tunable effective gap in GaAs n-i-p-i superlattices

1982 · H. Jung, G.H. Döhler, et al. · Solid State Communications · 51

The effect of arsenic vapour species on electrical and optical properties of GaAs grown by molecular beam epitaxy

1982 · H. K�nzel, J. Knecht, et al. · Applied Physics A · 42

GH25-10: New qualified power GaN HEMT process from technology to product overview

2014 · D. Floriot, V. Brunel, et al. · European Microwave Integrated Circuits Conference · 38

Industrial 0.15-μm AlGaN/GaN on SiC Technology for Applications up to Ka Band

2018 · V. Di Giacomo-Brunel, E. Byk, et al. · European Microwave Integrated Circuits Conference · 36

Photoluminescence of AlxGa1?xAs/GaAs quantum well heterostructures grown by molecular beam epitaxy

1984 · H. Jung, A. Fischer, et al. · Applied Physics A · 36

Reliability data’s of 0.5μm AlGaN/GaN on SiC technology qualification

2012 · B. Lambert, J. Thorpe, et al. · Microelectronics Reliability · 25

Optical gain in GaAs doping superlattices

1983 · H. Jung, G. H. Döhler, et al. · Applied Physics Letters · 24

Field Dependent Self-Heating Effects in High-Power AlGaN/GaN HEMTs

2009 · Michael Hosch, J. W. Pomeroy, et al. · 23

Photoluminescence of Al x Ga1?x As/GaAs quantum well heterostructures grown by molecular beam epitaxy

1984 · H. Jung, A. Fischer, et al. · Applied Physics A · 21

New qualified industrial AlGaN/GaN HEMT process: Power performances & reliability figures of merit

2012 · D. Floriot, H. Blanck, et al. · European Microwave Integrated Circuit Conference · 19

Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures

2016 · M. Broas, A. Graff, et al. · Microelectronics Reliability · 13

Picosecond pulse generation in a GaAs/GaAlAs single-quantum-well laser at the first and second subband transition

1992 · W. Elsasser, J. Sacher, et al. · IEEE Photonics Technology Letters · 10

GaN technologies and developments: Status and trends

2010 · M. Buchta, K. Beilenhoff, et al. · International Conference on Microwave and Millimeter Wave Technology (ICMMT) · 8

Experimental determination of the influence of gain saturation on the temperature dependence of threshold current in short AlGaAs-GaAs quantum-well lasers

1992 · H. Jung, E. Schlosser, et al. · Applied Physics Letters · 8

Tailoring of quantum well laser emission wavelength by antireflection facet coating

1991 · J. Sacher, W. Elsäßer, et al. · Electronics Letters · 5

INFLUENCE OF GROWTH CONDITIONS AND OF ALLOY COMPOSITION ON ELECTRICAL AND OPTICAL PROPERTIES OF MBE AlxGa1-xAs (0.2 = x = 0.4)

1982 · H. Künzel, H. Jung, et al. · Le Journal de Physique Colloques · 4

Tunable Photo- and Electroluminescence from GaAs Doping Superlattices

1983 · K. Ploog, H. Jung, et al. · Japanese Journal of Applied Physics · 3

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GaAs Industry in Europe--Technologies, Trends and New Developments

2008 · H. JUNG, H. BLANCK, et al. · IEICE Transactions on Electronics · 2

Spectrally and temporally resolved gain dynamics in mode locked semiconductor quantum well lasers

1997 · P. Miltényi, M. Koch, et al. · Applied Physics Letters · 2

INFLUENCE OF ARSENIC VAPOR SPECIES ON ELECTRICAL AND OPTICAL PROPERTIES OF MBE GROWN GaAs

1982 · H. Jung, H. Künzel, et al. · Le Journal de Physique Colloques · 2

Temporal and spectral refractive-index dynamics of mode-locked external-cavity semiconductor laser diodes

1997 · P. Miltényi, H. Jung, et al. · Journal of the Optical Society of America B · 1

Influence of material design parameters on radiative recombination in GaAs doping superlattices grown by MBE

1985 · H. Jung, K. Ploog · Applied Physics A · 1

Efficient Transmit Power Allocation with Partial Feedback for Closed-Loop SQRD Based V-BLAST Systems

2008 · H. JUNG, J. CHA, et al. · IEICE Transactions on Communications

Works count: 26

Citation count: 836

H-index: 13

I10-index: 14