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Y.H. Fu
Observed name:
Y. H. Fu
Institution:
Peking University
Observed institution:
Peking University
ORCID:
0009-0002-7187-578X
Observed ORCID:
0009-0002-7187-578X
OpenAlex ID:
A5008288952
Physical mechanisms of endurance degradation in TMO-RRAM
2011
·
B. Chen
, Y. Lu
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
182
Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect
2012
·
Y. Lu
, B. Chen
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
22
Multilevel resistive switching characteristics in Ag/SiO2/Pt RRAM devices
2011
·
D. Yu
, L. F. Liu
, et al.
·
IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
·
15
Co-existed unipolar and bipolar resistive switching effect of HfOx-based RRAM
2012
·
B. Chen
, B. Gao
, et al.
·
IEEE Silicon Nanoelectronics Workshop
·
7
Rectifying characteristics and implementation of n-Si/HfO2 based devices for 1D1R-based cross-bar memory array
2012
·
F. F. Zhang
, P. Huang
, et al.
·
IEEE Silicon Nanoelectronics Workshop
·
3
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Works count:
5
Citation count:
229
H-index:
4
I10-index:
3
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