Work

Physical mechanisms of endurance degradation in TMO-RRAM

Year: 2011

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.2011.6131539

Authors: B. Chen, Y. Lu, B. Gao, Y.H. Fu, F.F. Zhang, P. Huang, Y.S. Chen, L.F. Liu, X.Y. Liu, J.F. Kang, Y.Y. Wang, Z. Fang, H.Y. Yu, X. Li, X.P. Wang, N. Singh, G. Q. Lo, D. L. Kwong

Institutions: Peking University, Agency for Science, Technology and Research, Nanyang Technological University, Institute of Microelectronics

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2018068167

FWCI: 12.31

Cites: 8

Cited by: 182

Related to: 10