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X. Li
Institution:
IBM (United States)
Observed institution:
IBM (United States)
ORCID:
0009-0008-0722-2956
Observed ORCID:
0009-0008-0722-2956
OpenAlex ID:
A5010965089
A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid Cu-adhesive bonding
2008
·
F. Liu
, R. R. Yu
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
119
22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL
2012
·
S. Narasimha
, P. Chang
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
95
Fully depleted extremely thin SOI technology fabricated by a novel integration scheme featuring implant-free, zero-silicon-loss, and faceted raised source/drain
2006
·
Kangguo Cheng
, A. Khakifirooz
, et al.
·
Symposium on VLSI Technology
·
35
A 0.127 μm2 High Performance 65nm SOI Based embedded DRAM for on-Processor Applications
2006
·
G. Wang
, K. Cheng
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
14
0.026µm2 high performance Embedded DRAM in 22nm technology for server and SOC applications
2014
·
C. Pei
, G. Wang
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
5
Characterization of novel TiN/HfO2 metal insulator semiconductor stack for 32nm eDRAM
2010
·
P. Goyal
, S. Gupta
, et al.
·
IEEE International SOI Conference (SOI)
·
1
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Works count:
6
Citation count:
269
H-index:
5
I10-index:
4
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