22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL
Year: 2012
Type: conference-paper
Authors: S. Narasimha, P. Chang, C. Ortolland, D. Fried, E. Engbrecht, K. Nummy, P. Parries, T. Ando, M. Aquilino, N. Arnold, R. Bolam, J. Cai, M. Chudzik, B. Cipriany, G. Costrini, M. Dai, J. Dechene, C. DeWan, B. Engel, M. Gribelyuk, D. Guo, G. Han, N. Habib, J. Holt, D. Ioannou, B. Jagannathan, D. Jaeger, J. Johnson, W. Kong, J. Koshy, R. Krishnan, A. Kumar, M. Kumar, J. Lee, X. Li, C-H. Lin, B. Linder, S. Lucarini, N. Lustig, P. McLaughlin, K. Onishi, V. Ontalus, R. Robison, C. Sheraw, M. Stoker, A. Thomas, G. Wang, R. Wise, L. Zhuang, G. Freeman, J. Gill, E. Maciejewski, R. Malik, J. Norum, P. Agnello
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2014494940