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Ronald Bolam

Observed names: Bolam, Ronald, R. Bolam, R. J. Bolam, R.J. Bolam, Ron Bolam
Institution: IBM (United States)
OpenAlex ID: A5113572484
22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL
2012 · S. Narasimha, P. Chang, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 95
Partially-depleted SOI technology for digital logic
2003 · G.G. Shahidi, A. Ajmera, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 73
High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL
2006 · W-H. Lee, A. Waite, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 53
A 0.25 μm CMOS SOI technology and its application to 4 Mb SRAM
2002 · D.J. Schepis, F. Assaderaghi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 51
A 7.9/5.5 psec room/low temperature SOI CMOS
2002 · F. Assaderaghi, W. Rausch, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 44
Mainstreaming of the SOI technology
1999 · G. Shahidi, H.-S. Lo, et al. · IEEE International SOI Conference (SOI) · 39
Ring Oscillator Based Test Structure for NBTI Analysis
2007 · Mark B. Ketchen, Manjul Bhushan, et al. · IEEE International Conference on Microelectronic Test Structures (ICMTS) · 38
New breakdown data generation and analytics methodology to address BEOL and mol dielectric TDDB process development and technology qualification challenges
2014 · Fen Chen, Carole Graas, et al. · IEEE International Reliability Physics Symposium proceedings · 36
Ti and NiPt/Ti liner silicide contacts for advanced technologies
2016 · P. Adusumilli, E. Alptekin, et al. · Symposium on VLSI Technology · 31
Polarity-dependent oxide breakdown of NFET devices for ultra-thin gate oxide
2003 · E. Wu, W. Lai, et al. · IEEE International Reliability Physics Symposium proceedings · 29
Scalability of SOI technology into 0.13 μm 1.2 V CMOS generation
2002 · E. Leobandung, M. Sherony, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 27
A low complexity 0.13 μ SiGe BiCMOS technology for wireless and mixed signal applications
2004 · L. Lanzerotti, N. Feilchenfeld, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 19
Device and circuit design issues in SOI technology
2003 · G.G. Shahidi, A. Ajmera, et al. · Custom Integrated Circuits Conference · 17
A robust reliability methodology for accurately predicting Bias Temperature Instability induced circuit performance degradation in HKMG CMOS
2011 · D.P. Ioannou, K. Zhao, et al. · IEEE International Reliability Physics Symposium proceedings · 15
Negative bias temperature instability on three oxide thicknesses (1.4/2.2/5.2 nm) with nitridation variations and deuteration
2004 · Terence B. Hook, Ronald Bolam, et al. · Microelectronics Reliability · 15
Electrical characteristics and reliability of UV transparent Si/sub 3/n/sub 3/ metal-insulator-metal (MIM) capacitors
2003 · R.J. Bolam, V. Ramachandran, et al. · IEEE Transactions on Electron Devices · 13
Correlation between theory and data for mechanisms leading to dielectric breakdown
2002 · W.W. Abadeer, R.-P. Vollertsen, et al. · Symposium on VLSI Technology · 12
Reliability issues for silicon-on-insulator
2002 · R. Bolam, G. Shahidi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 11
Nitrided gate oxides for 3.3-V logic application: Reliability and device design considerations
1999 · T. B. Hook, J. S. Burnham, et al. · IBM Journal of Research and Development · 9
Applications of clustering model to bimodal distributions for dielectric breakdown
2017 · Ernest Y. Wu, Ronald Bolam, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 8
A thermally activated gate current in off-state PMOSFETs
2002 · S. Geissler, E. Adler, et al. · IEEE International Reliability Physics Symposium proceedings · 8
A viable and comprehensive TDDB assessment methodology for investigation of SRAM Vmin failure
2009 · E. Wu, G. Braceras, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 7
Interface state generation in pFETs with ultra-thin oxide and oxynitride on (100) and (110) Si substrates
2005 · J.H. Stathis, R. Bolam, et al. · Microelectronic Engineering · 7
Gate dielectric integrity and reliability in 0.5- mu m CMOS technology
1993 · A.W. Strong, A.K. Stamper, et al. · IEEE International Reliability Physics Symposium proceedings · 7
A New Clustering-Function-Based Formulation of Temporal and Spatial Clustering Model Involving Area Scaling and its Application to Parameter Extraction
2024 · Ernest Wu, Brian McGowan, et al. · IEEE International Reliability Physics Symposium proceedings · 6
Works count: 39
Citation count: 715
H-index: 15
I10-index: 18
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