Get started
Author

B. Jagannathan

Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology
2002 · B. Jagannathan, M. Khater, et al. · IEEE Electron Device Letters · 271
SiGe HBTs with cut-off frequency of 350 GHz
2003 · J.-S. Rieh, B. Jagannathan, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 206
Record RF performance of 45-nm SOI CMOS Technology
2007 · Sungjae Lee, Basanth Jagannathan, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 189
High performance 14nm SOI FinFET CMOS technology with 0.0174µm 2 embedded DRAM and 15 levels of Cu metallization
2014 · C-H. Lin, B. Greene, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 133
A 0.18 μm BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect
2002 · A. Joseph, D. Coolbaugh, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 130
22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL
2012 · S. Narasimha, P. Chang, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 95
A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure
2001 · S.J. Jeng, B. Jagannathan, et al. · IEEE Electron Device Letters · 91
Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS
2005 · A.J. Joseph, D.L. Harame, et al. · Proceedings of the IEEE · 90
SiGe Heterojunction Bipolar Transistors and Circuits Toward Terahertz Communication Applications
2004 · J.-S. Rieh, B. Jagannathan, et al. · IEEE Transactions on Microwave Theory and Techniques · 86
Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors
2002 · J.-S. Rieh, D. Greenberg, et al. · IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) · 74
40-Gb/s circuits built from a 120-GHz f/sub T/ SiGe technology
2002 · G. Freeman, M. Meghelli, et al. · IEEE Journal of Solid-State Circuits · 74
A 150 GHz Amplifier With 8 dB Gain and $+$6 dBm $P_{\rm sat}$ in Digital 65 nm CMOS Using Dummy-Prefilled Microstrip Lines
2009 · Munkyo Seo, Basanth Jagannathan, et al. · IEEE Journal of Solid-State Circuits · 72
Transistor design and application considerations for < 200-GHz SiGe HBTs
2003 · G. Freeman, B. Jagannathan, et al. · IEEE Transactions on Electron Devices · 68
A 7nm CMOS technology platform for mobile and high performance compute application
2017 · S. Narasimha, B. Jagannathan, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 62
SiGe HBTs for millimeter-wave applications with simultaneously optimized f/sub T/ and f/sub max/ of 300 GHz
2004 · J.-S. Rieh, D. Greenberg, et al. · Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium · 59
A 1.1V 150GHz amplifier with 8dB gain and +6dBm saturated output power in standard digital 65nm CMOS using dummy-prefilled microstrip lines
2009 · Munkyo Seo, B. Jagannathan, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 55
Technology Scaling and Device Design for 350 GHz RF Performance in a 45nm Bulk CMOS Process
2007 · Hongmei Li, Basanth Jagannathan, et al. · Symposium on VLSI Technology · 55
3.9 ps SiGe HBT ECL ring oscillator and transistor design for minimum gate delay
2003 · B. Jagannathan, M. Meghelli, et al. · IEEE Electron Device Letters · 47
Product applications and technology directions with SiGe BiCMOS
2003 · A.J. Joseph, J. Dunn, et al. · IEEE Journal of Solid-State Circuits · 45
Amorphous silicon/p-type crystalline silicon heterojunction solar cells
1997 · B. Jagannathan, W.A. Anderson, et al. · Solar Energy Materials and Solar Cells · 45
100 GHz dynamic frequency divider in SiGe bipolar technology
2003 · A. Rylyakov, L. Klapproth, et al. · Electronics Letters · 43
Noise performance of a low base resistance 200 GHz SiGe technology
2003 · D.R. Greenberg, B. Jagannathan, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 42
Fully depleted extremely thin SOI for mainstream 20nm low-power technology and beyond
2010 · Ali Khakifirooz, Kangguo Cheng, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 40
RFCMOS technology from 0.25μm to 65nm: the state of the art
2004 · J. Pekarik, D. Greenberg, et al. · Custom Integrated Circuits Conference · 38
Record RF performance of sub-46 nm L/sub gate/ NFETs in microprocessor SOI CMOS technologies
2006 · Sungjae Lee, L. Wagner, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 37
Works count: 80
Citation count: 2,573
H-index: 28
I10-index: 41
Year
Topic
Type