Work

A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure

Year: 2001

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/55.962657

Authors: S.J. Jeng, B. Jagannathan, J.-S. Rieh, J. Johnson, K.T. Schonenberg, D. Greenberg, A. Stricker, H. Chen, M. Khater, D. Ahlgren, G. Freeman, K. Stein, S. Subbanna

Institution: IBM (United States)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W2016270879

FWCI: 18.82

Cites: 8

Cited by: 91

Related to: 10