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D. Jaeger

Observed name: Daniel Jaeger
OpenAlex ID: A5111745720
A cost effective 32nm high-K/ metal gate CMOS technology for low power applications with single-metal/gate-first process
2008 · X. Chen, S. Samavedam, et al. · Symposium on VLSI Technology · 118
22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL
2012 · S. Narasimha, P. Chang, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 95
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
2011 · S. Krishnan, U. Kwon, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 84
A 7nm CMOS technology platform for mobile and high performance compute application
2017 · S. Narasimha, B. Jagannathan, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 62
Scaling of 32nm low power SRAM with high-K metal gate
2008 · H. S. Yang, R. Wong, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 53
Analysis of Gate-Induced Drain Leakage Mechanisms in Silicon-Germanium Channel pFET
2014 · Vishal A. Tiwari, Daniel Jaeger, et al. · IEEE Transactions on Electron Devices · 23
Hybrid low‐ k spacer scheme for advanced FinFET technology parasitic capacitance reduction
2020 · M. Gu, X. Wang, et al. · Electronics Letters · 22
New layout dependency in high-k/Metal Gate MOSFETs
2011 · M. Hamaguchi, D. Nair, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 14
Effect of Germanium Preamorphization Implant on Performance and Gate-Induced Drain Leakage in SiGe Channel pFET
2015 · Vishal A. Tiwari, Young Way Teh, et al. · IEEE Electron Device Letters · 7
0.026µm2 high performance Embedded DRAM in 22nm technology for server and SOC applications
2014 · C. Pei, G. Wang, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 5
2 nd Generation dual-channel optimization with cSiGe for 22nm HP technology and beyond
2013 · C. Ortolland, D. Jaeger, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 4
Single wafer cleaning lessons in advanced node gate module development
2013 · David F. Hilscher, Daniel Jaeger, et al. · ASMC proceedings · 3
High-κ/metal gate low power bulk technology - Performance evaluation of standard CMOS logic circuits, microprocessor critical path replicas, and SRAM for 45nm and beyond
2009 · D.-G. Park, K. Stein, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 1
Mitigation of Copper Galvanic Corrosion by Dry Etch and Wet Clean Optimization : YE: Yield Enhancement/Learning
2023 · Allen Osaheni, Daniel Jaeger, et al. · ASMC proceedings
Leveraging puma DF wafer inspection to characterize root cause of yield loss on an advanced 32 nm HKMG SOI technology device
2013 · Alisa Blauberg, Andrew Stamper, et al. · ASMC proceedings
High-K/Metal Gate MOSFETs における新しいレイアウト依存性
2012 · 雅史 濱口, Deleep R. Nair, et al.
Novel High-Performance Analog Devices for Advanced Low-Power High-k Metal Gate Complementary Metal–Oxide–Semiconductor Technology
2011 · Jin-Ping Han, Takashi Shimizu, et al. · Japanese Journal of Applied Physics
Cost Efficient Novel High Performance Analog Devices Integrated with Advanced HKMG Scheme for 28nm CMOS Technology and Beyond
2010 · J. P. Han, T. Shimizu, et al. · International Conference on Solid State Devices and Materials (SSDM)
Stress Liner Proximity Technique to Enhance Carrier Mobility in High-κ Metal Gate MOSFETs
2009 · Dechao Guo, Kathryn Schonenberg, et al. · MRS Proceedings
Investigation of sputtered hafnium oxides for gate dielectric applications in integrated circuits
2006 · D. Jaeger
Integration of High-K Dielectrics and Metal Gates into Submicron NMOS Transistors at RIT
2005 · D. Jaeger · RIT Scholar Works (Rochester Institute of Technology)
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RIT Undergraduate Symposium 2005
2005 · A. Bodell, Scott Williams, et al.
The Journal of Microelectronic Research 2005
2005 · D. Jaeger, A A Hood James, et al. · RIT Scholar Works (Rochester Institute of Technology)
Works count: 23
Citation count: 491
H-index: 8
I10-index: 8
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