Work

Scaling of 32nm low power SRAM with high-K metal gate

Year: 2008

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.2008.4796660

Authors: H. S. Yang, R. Wong, R. Hasumi, Y. Gao, N.S. Kim, D. H. Lee, S. Badrudduza, D. Nair, M. Ostermayr, H. Kang, H. Zhuang, J. Li, L. Kang, X. Chen, A. Thean, F. Arnaud, L. Zhuang, C. Schiller, D. P. Sun, Y. W. Teh, J. Wallner, Y. Takasu, K. Stein, S. Samavedam, D. Jaeger, C.V. Baiocco, M. Sherony, M. Khare, C. Lage, J. Pape, J. Sudijono, A.L. Steegen, S. Stiffler

Institutions: IBM (United States), Toshiba (Japan), Infineon Technologies (Germany), Infineon Technologies (United States), STMicroelectronics (United States), Toshiba (United States)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W2000675952

FWCI: 11.85

Cites: 1

Cited by: 53

Related to: 10