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Laegu Kang

Observed names: L. Kang, L.-G. Kang, L.G. Kang, LaeGu Kang
OpenAlex ID: A5111610522
Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
2000 · Byoung Hun Lee, Laegu Kang, et al. · Applied Physics Letters · 612
Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric
2000 · Laegu Kang, Byoung Hun Lee, et al. · IEEE Electron Device Letters · 247
Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application
2000 · Wen-Jie Qi, Renee Nieh, et al. · Applied Physics Letters · 175
Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application
2003 · Byoung Hun Lee, Laegu Kang, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 150
Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application
2000 · Wen-Jie Qi, Renee Nieh, et al. · Applied Physics Letters · 114
MOSFET devices with polysilicon on single-layer HfO/sub 2/ high-K dielectrics
2002 · L. Kang, K. Onishi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 73
MOSCAP and MOSFET characteristics using ZrO/sub 2/ gate dielectric deposited directly on Si
2003 · Wen-Jie Qi, Renee Nieh, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 71
Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8 Å-12 Å)
2002 · Byoung Hun Lee, R. Choi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 54
Scaling of 32nm low power SRAM with high-K metal gate
2008 · H. S. Yang, R. Wong, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 53
Single-layer thin HfO/sub 2/ gate dielectric with n+-polysilicon gate
2002 · L. Kang, Yongjoo Jeon, et al. · Symposium on VLSI Technology · 31
High performance bulk planar 20nm CMOS technology for low power mobile applications
2012 · Huiling Shang, S. Jain, et al. · Symposium on VLSI Technology · 29
Performance of MOSFETs with ultra thin ZrO/sub 2/ and Zr silicate gate dielectrics
2002 · Wen-Jie Qi, R. Nieh, et al. · Symposium on VLSI Technology · 28
Dopant penetration effects on polysilicon gate HfO/sub 2/ MOSFET's
2002 · K. Onishi, L. Kang, et al. · Symposium on VLSI Technology · 26
Performance of super-critical strained-si directly on insulator (SC-SSOI) CMOS based on high-performance PD-SOI technology
2005 · A.V.Y. Thean, T. White, et al. · Symposium on VLSI Technology · 17
High-K gate dielectrics
1999 · Wen-Jie Qi, Byoung H. Lee, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 17
Highly Reliable Thin Hafnium Oxide Gate Dielectric
1999 · Laegu Kang, Byoung-Hun Lee, et al. · MRS Proceedings · 17
Extending HKMG scaling on CMOS with FDSOI: Advantages and integration challenges
2016 · D.H. Triyoso, R. Carter, et al. · IEEE International Conference on IC Design and Technology (ICICDT) · 16
Ultra thin high quality Ta/sub 2/O/sub 5/ gate dielectric prepared by in-situ rapid thermal processing
2002 · H.F. Luan, B.Z. Wu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 12
Tungsten silicide/titanium nitride compound gate for submicron CMOSFET
1990 · K.T. Kim, L.G. Kang, et al. · Symposium on VLSI Technology · 12
Avoiding plasma induced damage to gate oxide with conductive top film (CTF) on PECVD contact etch stop layer
2003 · Seung-Chul Song, S. Filipiak, et al. · Symposium on VLSI Technology · 8
Hot carrier enhanced gate current and its impact on short channel nMOSFET reliability with ultra-thin gate oxides
2002 · B.W. Min, O. Zia, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 6
Nitrogen (N2) Implantation to Suppress Growth of Interfacial Oxide in Mocvd Bst and Sputtered Bst Films
1999 · Renee Nieh, Wen-Jie Qi, et al. · MRS Proceedings · 6
Characterization of atomic layer deposited low-k spacer for FDSOI high-k metal gate transistor
2017 · D.H. Triyoso, G.R. Mulfinger, et al. · IEEE International Conference on IC Design and Technology (ICICDT) · 5
Effects of Hf contamination on the properties of silicon oxide metal–oxide–semiconductor devices
2002 · Chang Seok Kang, Katsunori Onishi, et al. · Applied Physics Letters · 5
(Invited) Factors Impacting Threshold Voltage in Advanced CMOS Integration: Gate Last (FINFET) vs. Gate First (FDSOI)
2015 · Dina Triyoso, Rick Carter, et al. · ECS Transactions · 4
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Works count: 37
Citation count: 1,800
H-index: 16
I10-index: 19
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