Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application
Year: 2000
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.1326482
Institution: The University of Texas at Austin
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1968197882