Work

Ultra thin high quality Ta/sub 2/O/sub 5/ gate dielectric prepared by in-situ rapid thermal processing

Year: 2002

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.1998.746432

Authors: H.F. Luan, B.Z. Wu, L.G. Kang, B.Y. Kim, R. Vrtis, D. Roberts, D.L. Kwong

Institution: The University of Texas at Austin

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2531994522

FWCI: 1.877

Cites: 4

Cited by: 12

Related to: 10