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Leonardus H. A. Leunissen

Observed names: L LEUNISSEN, L. H. A. Leunissen, L. H. Leunissen, L. Leunissen, L.H.A. Leunissen, Leonardus A. H. Leunissen, Leonardus H. Leunissen, Leonardus H.A. Leunissen, Leonardus Leunissen
OpenAlex ID: A5012000813
Line edge roughness and critical dimension variation: Fractal characterization and comparison using model functions
2004 · V. Constantoudis, G. P. Patsis, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 106
Lithographic importance of acid diffusion in chemically amplified resists
2005 · David Van Steenwinckel, Jeroen H. Lammers, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 72
Fundamental Investigation of Chemical Mechanical Polishing of GaAs in Silica Dispersions: Material Removal and Arsenic Trihydride Formation Pathways
2013 · J. B. Matovu, P. Ong, et al. · ECS Journal of Solid State Science and Technology · 41
Void-Free Filling of HAR TSVs Using a Wet Alkaline Cu Seed on CVD Co as a Replacement for PVD Cu Seed
2010 · S. Armini, Z. El-Mekki, et al. · Journal of The Electrochemical Society · 40
Influence of gate patterning on line edge roughness
2003 · Leonardus H. A. Leunissen, Rik Jonckheere, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 40
A Functional 41-Stage Ring Oscillator Using Scaled FinFET Devices With 25-nm Gate Lengths and 10-nm Fin Widths Applicable for the 45-nm CMOS Node
2004 · N. Collaert, A. Dixit, et al. · IEEE Electron Device Letters · 37
Use of Multifunctional Carboxylic Acids and Hydrogen Peroxide To Improve Surface Quality and Minimize Phosphine Evolution During Chemical Mechanical Polishing of Indium Phosphide Surfaces
2013 · John B. Matovu, Patrick Ong, et al. · Industrial & Engineering Chemistry Research · 35
Line edge roughness: experimental results related to a two-parameter model
2004 · L LEUNISSEN · Microelectronic Engineering · 34
Impact of line edge roughness on copper interconnects
2006 · L. H. A. Leunissen, W. Zhang, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 31
Chemical Mechanical Polishing of InP
2012 · Shivaji Peddeti, Patrick Ong, et al. · ECS Journal of Solid State Science and Technology · 29
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Chemical Mechanical Polishing of Ge Using Colloidal Silica Particles and H 2 O 2
2011 · Shivaji Peddeti, Patrick Ong, et al. · Electrochemical and Solid-State Letters · 29
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Impact of line width roughness on the matching performances of next-generation devices
2007 · C. Gustin, L.H.A. Leunissen, et al. · Thin Solid Films · 25
Impact of line width roughness on device performance
2006 · G. F. Lorusso, L. H. A. Leunissen, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 22
CMP process optimization for improved compatibility with advanced metal liners
2010 · Nancy Heylen, Li Yunlong, et al. · IEEE International Interconnect Technology Conference (IITC) · 19
Full spectral analysis of line width roughness
2005 · L. H. A. Leunissen, G. F. Lorusso, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 19
Experimental investigation of the impact of line-edge roughness on MOSFET performance and yield
2004 · J.A. Croon, L.H.A. Leunissen, et al. · IEEE Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS) · 19
Determining the impact of statistical fluctuations on resist line edge roughness
2005 · L.H.A. Leunissen, M. Ercken, et al. · Microelectronic Engineering · 18
Toward a complete description of linewidth roughness: a comparison of different methods for vertical and spatial LER and LWR analysis and CD variation
2004 · Vassilios Constantoudis, George P. Patsis, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 16
Chemical mechanical planarization of germanium shallow trench isolation structures using silica-based dispersions
2012 · Shivaji Peddeti, Patrick Ong, et al. · Microelectronic Engineering · 15
Ge- and III/V-CMP for Integration of High Mobility Channel Materials
2011 · Patrick Ong, Liesbeth Witters, et al. · ECS Transactions · 15
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Challenges with Respect to High-k/Metal Gate Stack Etching and Cleaning
2007 · Rita Vos, Sophia Arnauts, et al. · ECS Transactions · 15
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Chemical mechanical planarization of patterned InP in shallow trench isolation (STI) template structures using hydrogen peroxide–based silica slurries containing oxalic acid or citric acid
2013 · John B. Matovu, Patrick Ong, et al. · Microelectronic Engineering · 13
Effects of different processing conditions on line-edge roughness for 193-nm and 157-nm resists
2004 · Monique Ercken, Leonardus H. A. Leunissen, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 13
Post Ion-Implant Photoresist Removal via Wet Chemical Cleans Combined with Physical Force Pretreatments
2007 · George G. Totir, Martin Frank, et al. · ECS Transactions · 12
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Wafer Backside Thinning Process Integrated with Post-Thinning Clean and TSV Exposure Recess Etch
2012 · Ming Zhao, Susumu Hayakawa, et al. · ECS Transactions · 11
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Works count: 70
Citation count: 878
H-index: 17
I10-index: 28
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