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A. Kurobe

Observed names: A Kurobe, ATSUSHI KUROBE, Atsushi KUROBE, Atsushi Kurobe, Kurobe, Atsushi, 篤 黒部, 黒部篤
ORCID: 0000-0002-7480-6993
Observed ORCID: 0000-0002-7480-6993
OpenAlex ID: A5014495014
Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers
1985 · P.M. Ilroy, A. Kurobe, et al. · IEEE Journal of Quantum Electronics · 286
Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology
2000 · T. Mizuno, S. Takagi, et al. · IEEE Electron Device Letters · 203
Correlation Effects on Variable Range Hopping Conduction and the Magnetoresistance
1982 · Atsushi Kurobe, Hiroshi Kamimura · Journal of the Physical Society of Japan · 147
Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density
2016 · H. Yoda, N. Shimomura, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 83
Effects of well number, cavity length, and facet reflectivity on the reduction of threshold current of GaAs/AlGaAs multiquantum well lasers
1988 · A. Kurobe, H. Furuyama, et al. · IEEE Journal of Quantum Electronics · 61
Band filling in GaAs/AlGaAs multiquantum well lasers and its effect on the threshold current
1989 · R. Nagarajan, T. Kamiya, et al. · IEEE Journal of Quantum Electronics · 56
Advanced SOI p-MOSFETs with strained-Si channel on SiGe-on-insulator substrate fabricated by SIMOX technology
2001 · T. Mizuno, N. Sugiyama, et al. · IEEE Transactions on Electron Devices · 54
Wave functions and Fermi surfaces of strongly coupled two-dimensional electron gases investigated by in-plane magnetoresistance
1994 · A. Kurobe, I. M. Castleton, et al. · Physical review. B, Condensed matter · 53
Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height
2017 · T. Inokuchi, H. Yoda, et al. · Applied Physics Letters · 44
Giant voltage-controlled magnetic anisotropy effect in a crystallographically strained CoFe system
2018 · Yushi Kato, Hiroaki Yoda, et al. · Applied Physics Express · 38
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Voltage-Control Spintronics Memory With a Self-Aligned Heavy-Metal Electrode
2017 · S. Shirotori, H. Yoda, et al. · IEEE Transactions on Magnetics · 37
The effect of conduction band non-parabolicity on inter-sub-band absorption in doped quantum wells
1988 · D J Newson, A Kurobe · Semiconductor Science and Technology · 37
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High performance strained-Si p-MOSFETs on SiGe-on-insulator substrates fabricated by SIMOX technology
2003 · T. Mizuno, S. Takagi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 35
Improvement of Write Efficiency in Voltage-Controlled Spintronic Memory by development of a Ta−B Spin Hall Electrode
2018 · Y. Kato, Y. Saito, et al. · Physical Review Applied · 34
Formation of strained-silicon layer on thin relaxed-SiGe/SiO 2 /Si structure using SIMOX technology
2000 · N Sugiyama, T Mizuno, et al. · Thin Solid Films · 34
Device structure and electrical characteristics of strained-Si-on-insulator (strained-SOI) MOSFETs
2002 · S Takagi, N Sugiyama, et al. · Materials Science and Engineering B · 29
Fabrication of high mobility in situ back-gated (311)A hole gas heterojunctions
1997 · M. Y. Simmons, A. R. Hamilton, et al. · Applied Physics Letters · 28
Magnetoresistance in Anderson-localized systems
1983 · Hiroshi Kamimura, Atsushi Kurobe, et al. · Physica B+C · 25
Real-time observation of fast and highly reliable magnetization switching in Voltage-Control Spintronics Memory (VoCSM)
2019 · T. Inokuchi, H. Yoda, et al. · Applied Physics Letters · 24
Possibility of optical bistability due to resonant intersubband excitation in stepped modulation-doped quantum wells
1987 · D. J. Newson, A. Kurobe · Applied Physics Letters · 21
Effect of residual doping on optimum structure of multiquantum-well optical modulators
1987 · D.J. Newson, A. Kurobe · Electronics Letters · 19
High-Speed Voltage-Control Spintronics Memory (High-Speed VoCSM)
2017 · Hiroaki Yoda, Hideyuki Sugiyama, et al. · IEEE International Memory Workshop (IMW) · 18
Fabrication of nano-crystal silicon on SiO2 using the agglomeration process
1998 · Naoharu Sugiyama, Tsutomu Tezuka, et al. · Journal of Crystal Growth · 18
Strained-Si-on-Insulator (Strained-SOI) MOSFETs-Concept, Structures and Device Characteristics
2001 · Shinichi Takagi, Tomohisa Mizuno, et al. · IEICE Transactions on Electronics · 16
Theory of magnetoresistance in the Anderson-localised regime of semiconductors
1986 · A Kurobe · Journal of Physics C Solid State Physics · 15
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Works count: 81
Citation count: 1,623
H-index: 20
I10-index: 36
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