Work

Formation of strained-silicon layer on thin relaxed-SiGe/SiO 2 /Si structure using SIMOX technology

Year: 2000

Type: article

Source: Thin Solid Films

DOI: 10.1016/s0040-6090(00)00806-3

Authors: N Sugiyama, T Mizuno, S Takagi, M Koike, A Kurobe

Institution: Toshiba (Japan)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2013406785

FWCI: 5.494

Cites: 2

Cited by: 34

Related to: 10