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Nikolaus Gmeinwieser
Observed names:
Gmeinwieser, Nikolaus,
N. Gmeinwieser
Institution:
Osram Opto Semiconductors
Observed institutions:
Osram Opto Semiconductors,
University of Regensburg
OpenAlex ID:
A5014690669
True-blue InGaN laser for pico size projectors
2008
·
U. Strauβ
, S. Brüninghoff
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
·
48
Pattern formation and directional and spatial ordering of edge dislocations in bulk GaN: Microphotoluminescence spectra and continuum elastic calculations
2007
·
Nikolaus Gmeinwieser
, Ulrich T. Schwarz
·
Physical Review B
·
28
Influence of an in situ-deposited intermediate layer inside GaN and AlGaN layers on SiC substrates
2006
·
K. Engl
, M. Beer
, et al.
·
Journal of Crystal Growth
·
27
Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates
2004
·
N. Gmeinwieser
, K. Engl
, et al.
·
Journal of Applied Physics
·
27
Degradation Analysis of InGaN Laser Diodes
2002
·
V. K�mmler
, G. Br�derl
, et al.
·
physica status solidi (a)
·
27
Local strain and potential distribution induced by single dislocations in GaN
2005
·
N. Gmeinwieser
, P. Gottfriedsen
, et al.
·
Journal of Applied Physics
·
14
Bias dependent spatially resolved photoluminescence spectroscopy and photocurrent measurements of InGaN/GaN LED structures
2009
·
Clemens Vierheilig
, Ulrich T. Schwarz
, et al.
·
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics
·
5
Strain of single edge dislocations in bulk GaN
2007
·
Nikolaus Gmeinwieser
, Ulrich T. Schwarz
·
physica status solidi (b)
·
4
Long range strain and electrical potential induced by single edge dislocations in GaN
2006
·
N. Gmeinwieser
, P. Gottfriedsen
, et al.
·
Physica B Condensed Matter
·
4
Strain, wing tilt and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates
2004
·
Nikolaus Gmeinwieser
, Karl Engl
, et al.
·
physica status solidi (a)
·
1
Single dislocation induced strain in GaN
2005
·
N. Gmeinwieser
, P. Gottfriedsen
, et al.
·
University of Regensburg Publication Server (University of Regensburg)
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Works count:
13
Citation count:
185
H-index:
6
I10-index:
6
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