Work

Degradation Analysis of InGaN Laser Diodes

Year: 2002

Type: article

Abstract: The current status of InGaN-MQW-laser diodes developed at Osram OS is presented. These lasers are grown on n-conducting SiC, enabling a vertical current path, cleaved facets and excellent heat spreading. The temperature rise during cw operation is measured for different mountings. A p-side up mounted diode with thermal resistance of 18 K/W showed 143 h of cw lasing at 1 mW optical power (T = 25 °C). DC and pulsed aging shows current as main degradation reason compared to heat for InGaN-LDs. Photoluminescence spectra of the quantum wells are being compared before and after degradation caused by current.

Source: physica status solidi (a)

DOI: 10.1002/1521-396x(200212)194:2<419::aid-pssa419>3.0.co;2-b

Authors: V. K�mmler, G. Br�derl, S. Bader, S. Miller, A. Weimar, A. Lell, V. H�rle, U.T. Schwarz, N. Gmeinwieser, W. Wegscheider

Institutions: Osram Opto Semiconductors, University of Regensburg

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2002256088

FWCI: 2.12

Cites: 8

Cited by: 27

Related to: 10