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V. Fellmann

Molecular beam epitaxy growth and optical properties of AlN nanowires
2010 · O. Landré, V. Fellmann, et al. · Applied Physics Letters · 61
Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy
2012 · M. Balaji, A. Claudel, et al. · Journal of Alloys and Compounds · 44
Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy
2014 · A. Claudel, V. Fellmann, et al. · Thin Solid Films · 29
Ternary AlGaN Alloys with High Al Content and Enhanced Compositional Homogeneity Grown by Plasma-Assisted Molecular Beam Epitaxy
2011 · Vincent Fellmann, Périne Jaffrennou, et al. · Japanese Journal of Applied Physics · 18
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Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation
2010 · S. Magalhães, M. Peres, et al. · Journal of Applied Physics · 17
Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures
2013 · A Redondo-Cubero, K Lorenz, et al. · Nanotechnology · 15
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Strain assisted inter-diffusion in GaN/AlN quantum dots
2013 · C. Leclere, V. Fellmann, et al. · Journal of Applied Physics · 14
Effects of the V/III ratio on the quality of aluminum nitride grown on (0001) sapphire by high temperature hydride vapor phase epitaxy
2013 · N. Coudurier, R. Boichot, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 11
Effect of annealing on AlN/GaN quantum dot heterostructures: advanced ion beam characterization and X‐ray study of low‐dimensional structures
2010 · S. Magalhães, K. Lorenz, et al. · Surface and Interface Analysis · 8
Growth mechanism of catalyst‐free [0001] GaN and AlN nanowires on Si by molecular beam epitaxy
2010 · O. Landré, V. Fellmann, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 8
Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombination
2011 · Marco Peres, Sérgio Magalhães, et al. · Nanoscale Research Letters · 7
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The role of the annealing temperature on the optical and structural properties of Eu doped GaN/AlN QD
2010 · M. Peres, S. Magalhães, et al. · Optical Materials · 7
Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots
2010 · M. Peres, A. J. Neves, et al. · physica status solidi (b) · 6
GaN:Pr 3+ nanostructures for red solid state light emission
2014 · J. Rodrigues, N. Ben Sedrine, et al. · RSC Advances · 5
Chemical Vapor Deposition of Tungsten Coatings on X-ray Rotating Light Anodes Made of Carbon-Based Materials
2013 · Guillaume R. K. Huot, V. Fellmann, et al. · 3
Significance of initial stages on the epitaxial growth of AlN using high temperature halide chemical vapor deposition
2011 · Manavaimaran Balaji, Arnaud Claudel, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 3
Croissance et caractérisations structurales et optiques d'hétérostructures de nitrures d'éléments III émettant dans l'UV
2012 · Vincent Fellmann · theses.fr (ABES)
Works count: 17
Citation count: 256
H-index: 8
I10-index: 8
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