Work

Effects of the V/III ratio on the quality of aluminum nitride grown on (0001) sapphire by high temperature hydride vapor phase epitaxy

Year: 2013

Type: article

Source: Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

DOI: 10.1002/pssc.201200686

Authors: N. Coudurier, R. Boichot, V. Fellmann, A. Claudel, E. Blanquet, A. Crisci, S. Coindeau, D. Pique, M. Pons

Institutions: Institut polytechnique de Grenoble, Centre National de la Recherche Scientifique, Université Joseph Fourier, Science et Ingénierie des Matériaux et Procédés, Acerde (France)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Ministère de l'Enseignement Supérieur et de la Recherche, Acerde

OpenAlex ID: W1976472129

FWCI: 0.956

Cites:

Cited by: 11

Related to: 10