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M. Baldini

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga 2 O 3 MOSFETs
2016 · Andrew J. Green, Kelson D. Chabak, et al. · IEEE Electron Device Letters · 576
Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β -Ga2O3 substrate with high breakdown voltage
2016 · Kelson D. Chabak, Neil Moser, et al. · Applied Physics Letters · 378
$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation
2017 · Andrew Joseph Green, Kelson D. Chabak, et al. · IEEE Electron Device Letters · 327
Editors' Choice—Si- and Sn-Doped Homoepitaxial β-Ga 2 O 3 Layers Grown by MOVPE on (010)-Oriented Substrates
2016 · Michele Baldini, Martin Albrecht, et al. · ECS Journal of Solid State Science and Technology · 300
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Recent progress in the growth of β-Ga2O3 for power electronics applications
2017 · Michele Baldini, Zbigniew Galazka, et al. · Materials Science in Semiconductor Processing · 283
Homoepitaxial growth of β‐Ga2O3 layers by metal‐organic vapor phase epitaxy
2013 · Guenter Wagner, Michele Baldini, et al. · physica status solidi (a) · 215
Electrical compensation by Ga vacancies in Ga2O3 thin films
2015 · E. Korhonen, F. Tuomisto, et al. · Applied Physics Letters · 210
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Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE
2013 · D. Gogova, G. Wagner, et al. · Journal of Crystal Growth · 180
Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy
2015 · Michele Baldini, Martin Albrecht, et al. · Journal of Materials Science · 163
Epitaxial stabilization of pseudomorphic α-Ga2O3on sapphire (0001)
2014 · Robert Schewski, Günter Wagner, et al. · Applied Physics Express · 140
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Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model
2016 · R. Schewski, M. Baldini, et al. · Journal of Applied Physics · 135
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Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy
2017 · A. Fiedler, R. Schewski, et al. · Journal of Applied Physics · 101
Effect of indium as a surfactant in (Ga 1− x In x ) 2 O 3 epitaxial growth on β -Ga 2 O 3 by metal organic vapour phase epitaxy
2015 · M Baldini, M Albrecht, et al. · Semiconductor Science and Technology · 59
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Heteroepitaxy of Ga2(1‑x)In2xO3 layers by MOVPE with two different oxygen sources
2014 · M. Baldini, D. Gogova, et al. · Crystal Research and Technology · 41
Characterization of epitaxial 4H-SiC for photon detectors
2012 · F Dubecký, E Gombia, et al. · Journal of Instrumentation · 21
Co-evaporated YBCO/doped-CeO2/Ni–W coated conductors oxygen improved using a supersonic nozzle
2007 · E. Gilioli, M. Baldini, et al. · Physica C Superconductivity · 17
Unexpected current lowering by a low work-function metal contact: Mg/SI–GaAs
2013 · F. Dubecký, M. Dubecký, et al. · Solid-State Electronics · 12
Ga vacancies and electrical compensation in β-Ga2O3 thin films studied with positron annihilation spectroscopy
2019 · Ilja Makkonen, Antti Karjalainen, et al. · Oxide-based Materials and Devices · 8
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Growth and characterization of buried GaSb p‐n junctions for photovoltaic applications
2011 · M. Baldini, C. Ghezzi, et al. · Crystal Research and Technology · 8
Electrical and interfacial properties of GaAs/GaSb metal-organic vapour phase epitaxy heterostructures
2013 · A. Parisini, M. Baldini, et al. · Journal of Applied Physics · 6
Progress on Single Buffer Layered Coated Conductors Prepared by Thermal Evaporation
2007 · A. Gauzzi, M. Baldini, et al. · IEEE Transactions on Applied Superconductivity · 5
In Situ Oxidation of Superconducting YBCO Films by a Supersonic ${\rm O}_{2}$ Beam
2007 · S. Rampino, A. Gauzzi, et al. · IEEE Transactions on Applied Superconductivity · 3
Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures
2013 · M. Baldini, E. Gombia, et al. · Journal of Applied Physics · 2
Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices
2009 · Antonella Parisini, Carlo Ghezzi, et al. · Journal of Applied Physics · 2
Electrical characterization of a buried GaSb p‐n junction controlled by native defects
2014 · M. Gorni, A. Parisini, et al. · Crystal Research and Technology · 1
Works count: 32
Citation count: 3,196
H-index: 16
I10-index: 17
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