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Zhaoke Bian

Observed names: Bian Zhaoke, Zhao-Ke Bian
ORCID: 0000-0002-8613-5509
Observed ORCID: 0000-0002-8613-5509
OpenAlex ID: A5021689652
A 5.8-GHz High-Power and High-Efficiency Rectifier Circuit With Lateral GaN Schottky Diode for Wireless Power Transfer
2019 · Kui Dang, Jincheng Zhang, et al. · IEEE Transactions on Power Electronics · 126
A > 3 kV/2.94 m $\Omega\cdot$ cm 2 and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique
2019 · Tao Zhang, Jinfeng Zhang, et al. · IEEE Electron Device Letters · 72
Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration
2019 · Kui Dang, Jincheng Zhang, et al. · IEEE Transactions on Industrial Electronics · 65
A 1.9 kV/2.61 mΩ·cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate with Tungsten Anode and Low Turn-On Voltage of 0.35 V
2018 · Tao Zhang, Jincheng Zhang, et al. · IEEE Electron Device Letters · 55
1.48 MV⋅cmˉ¹/0.2 mΩ⋅cm² GaN Quasi-Vertical Schottky Diode via Oxygen Plasma Termination
2020 · Zhaoke Bian, Jincheng Zhang, et al. · IEEE Electron Device Letters · 41
High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm−2
2019 · Tao Zhang, Jincheng Zhang, et al. · Applied Physics Express · 40
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Leakage mechanism of quasi-vertical GaN Schottky barrier diodes with ultra-low turn-on voltage
2019 · Zhaoke Bian, Tao Zhang, et al. · Applied Physics Express · 34
Determination of the leakage current transport mechanisms in quasi-vertical GaN–on–Si Schottky barrier diodes (SBDs) at low and high reverse biases and varied temperatures
2021 · Jiabo Chen, Zhihong Liu, et al. · Applied Physics Express · 30
High-performance quasi-vertical GaN Schottky barrier diode with anode selective fluorine treatment
2019 · Jiabo Chen, Zhaoke Bian, et al. · Semiconductor Science and Technology · 26
Effects of thermal annealing on the electrical and structural properties of Mo/Au schottky contacts on n-GaN
2020 · Jiabo Chen, Zhaoke Bian, et al. · Journal of Alloys and Compounds · 17
High-performance quasi-vertical GaN Schottky diode with low turn-on voltage
2018 · Zhao-Ke Bian, Hong Zhou, et al. · Superlattices and Microstructures · 17
A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings
2021 · Jiabo Chen, Xiufeng Song, et al. · Applied Physics Express · 15
A high-voltage GaN quasi-vertical metal–insulator–semiconductor Schottky barrier diode on Si with excellent temperature characteristics
2022 · Xiufeng Song, Baorui Sun, et al. · Journal of Physics D Applied Physics · 11
Gamma irradiation impact on GaN quasi-vertical Schottky barrier diodes
2019 · Zhaoke Bian, Kai Su, et al. · Journal of Physics D Applied Physics · 11
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Parameter Shift of Quasi-Vertical GaN-on-Si Schottky Barrier Diodes Under On-State Forward-Current (2–4 kA/cm2) Stress
2023 · Shenglei Zhao, Jincheng Zhang, et al. · IEEE Transactions on Electron Devices · 6
Nearly ideal quasi-vertical GaN Schottky barrier diode with 1010 high on/off ratio and ultralow turn on voltage via post anode annealing
2021 · Jiabo Chen, Zhihong Liu, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM) · 4
アノード選択フッ素処理による高性能準垂直GaN Schottky障壁ダイオード【JST・京大機械翻訳】
2019 · Chen Jiabo, Bian Zhaoke, et al. · Semiconductor Science and Technology · 1
6–18 GHz High-Efficiency Power Amplifier MMIC Based on Broadband Impedance Matching
2026 · Shuai Liu, Xiaohua Ma, et al. · Micromachines
Corrigendum: “A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings” [Appl. Phys. Express 14, 116504 (2021)]
2022 · Jiabo Chen, Xiufeng Song, et al. · Applied Physics Express
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Works count: 19
Citation count: 571
H-index: 12
I10-index: 14
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