Work

Corrigendum: “A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings” [Appl. Phys. Express 14, 116504 (2021)]

Year: 2022

Type: erratum

Source: Applied Physics Express

DOI: 10.35848/1882-0786/ac4e29

Authors: Jiabo Chen, Xiufeng Song, Zhihong Liu, Xiaoling Duan, Haiyong Wang, Zhaoke Bian, Shenglei Zhao, Jincheng Zhang, Yue Hao

Institutions: Xidian University, China Electronics Technology Group Corporation

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W4211096782

Cites:

Cited by:

Related to: 10