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Tomonori Mizushima

Development of Ultrahigh-Voltage SiC Devices
2014 · Kenji Fukuda, Dai Okamoto, et al. · IEEE Transactions on Electron Devices · 95
Low Vf and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT
2013 · Yoshiyuki Yonezawa, Tomonori Mizushima, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 35
Dynamic Behavior of a Medium-Voltage N-Channel SiC-IGBT With Ultrafast Switching Performance of 300 kV/μs
2018 · Kunio Koseki, Yoshiyuki Yonezawa, et al. · IEEE Transactions on Industry Applications · 32
27.5 kV 4H-SiC PiN diode with space-modulated JTE and carrier injection control
2018 · Koji Nakayama, Tomonori Mizushima, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 29
Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs
2015 · Yoshiyuki Yonezawa, Tomonori Mizushima, et al. · Materials science forum · 27
High voltage SOI P-channel field MOSFET structures
2009 · David Hongfei Lu, Tomonori Mizushima, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 23
Dynamic characteristics of large current capacity module using 16-kV ultrahigh voltage SiC flip-type n-channel IE-IGBT
2014 · Tomonori Mizushima, Kensuke Takenaka, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 22
Static and dynamic performance evaluation of > 13 kV SiC p-channel IGBTs at high temperatures
2014 · Tadayoshi Deguchi, Tomonori Mizushima, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 15
Retrograded Channel SOI LIGBTs with Enhanced Safe Operating Area
2008 · David Hongfei Lu, Tomonori Mizushima, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 12
13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications
2014 · Dai Okamoto, Yasunori Tanaka, et al. · Materials science forum · 7
Low Von 17kV SiC IGBT assisted n-MOS Thyristor
2019 · S. Matsunaga, T. Mizushima, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 4
Dynamic behavior of a medium-voltage N-channel SiC-IGBT with ultra-fast switching performance of 300 kV/as
2016 · K. Koseki, Yoshiyuki Yonezawa, et al. · International Conference on Electrical Machines and Systems (ICEMS) · 3
Inhibiting effect of middle broad buffer layer diode using hydrogen-related shallow donor on reverse recovery oscillation
2010 · Tomonori Mizushima, M. Nemoto, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 3
High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode
2014 · Koji Nakayama, Shuji Ogata, et al. · Materials science forum · 2
Method of Strengthening Safe Operating Area for SOI Lateral Insulated Gate Bipolar Transistor
2008 · Tomonori Mizushima, David H. Lu · ECS Transactions · 1
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Fabrication and Performance of 16-kV Ultrahigh-Voltage SiC Power Devices
2014 · Yoshiyuki Yonezawa, Tomonori Mizushima, et al. · ECS Meeting Abstracts
Method of Strengthening Safe Operating Area for SOI Lateral Insulated Gate Bipolar Transistor
2008 · Tomonori Mizushima, David H. Lu · ECS Meeting Abstracts
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Works count: 17
Citation count: 310
H-index: 9
I10-index: 9
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