Work

High voltage SOI P-channel field MOSFET structures

Year: 2009

Type: conference-paper

Source: IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs

DOI: 10.1109/ispsd.2009.5157990

Authors: David Hongfei Lu, Tomonori Mizushima, Hitoshi Sumida, Masaru Saito, Haruo Nakazawa

Institution: Fuji Electric (Japan)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2167662986

FWCI: 1.872

Cites: 10

Cited by: 23

Related to: 10