Product
Help
Pricing
About
Jobs
Log in
Get started
Author
Add to collection
Sam-Young Bang
Observed name:
Samyoung Bang
Institutions:
Samsung (South Korea),
Samsung Electronics (South Korea)
Observed institutions:
Samsung (South Korea),
Samsung Electronics (South Korea)
OpenAlex ID:
A5023023936
An 80 nm 4 Gb/s/pin 32 bit 512 Mb GDDR4 Graphics DRAM With Low Power and Low Noise Data Bus Inversion
2008
·
Seung-Jun Bae
, Kwang-Il Park
, et al.
·
IEEE Journal of Solid-State Circuits
·
66
A 60nm 6Gb/s/pin GDDR5 Graphics DRAM with Multifaceted Clocking and ISI/SSN-Reduction Techniques
2008
·
Seung-Jun Bae
, Young-Soo Sohn
, et al.
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
·
47
A 16-Gb, 18-Gb/s/pin GDDR6 DRAM With Per-Bit Trainable Single-Ended DFE and PLL-Less Clocking
2018
·
Young-Ju Kim
, Hye-Jung Kwon
, et al.
·
IEEE Journal of Solid-State Circuits
·
41
A 7 Gb/s/pin 1 Gbit GDDR5 SDRAM With 2.5 ns Bank to Bank Active Time and No Bank Group Restriction
2010
·
Tae-Young Oh
, Young-Soo Sohn
, et al.
·
IEEE Journal of Solid-State Circuits
·
34
A 40nm 2Gb 7Gb/s/pin GDDR5 SDRAM with a programmable DQ ordering crosstalk equalizer and adjustable clock-tracking BW
2011
·
Seung-Jun Bae
, Young-Soo Sohn
, et al.
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
·
33
A 16Gb 18Gb/S/pin GDDR6 DRAM with per-bit trainable single-ended DFE and PLL-less clocking
2018
·
Young-Ju Kim
, Hye-Jung Kwon
, et al.
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
·
28
A 40nm 7Gb/s/pin single-ended transceiver with jitter and ISI reduction techniques for high-speed DRAM interface
2010
·
Seung-Jun Bae
, Young-Soo Sohn
, et al.
·
Symposium on VLSI Circuits
·
15
An 80nm 4Gb/s/pin 32b 512Mb GDDR4 Graphics DRAM with Low-Power and Low-Noise Data-Bus Inversion
2007
·
Jeong-Don Ihm
, Seung-Jun Bae
, et al.
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
·
14
A 7Gb/s/pin GDDR5 SDRAM with 2.5ns bank-to-bank active time and no bank-group restriction
2010
·
Tae-Young Oh
, Young-Soo Sohn
, et al.
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
·
9
Clock clustering and IO optimization for 3D integration
2015
·
Samyoung Bang
, Kwangsoo Han
, et al.
·
International Workshop on System Level Interconnect Prediction (SLIP)
·
6
Delay uncertainty and signal criticality driven routing channel optimization for advanced DRAM products
2016
·
Samyoung Bang
, Kwangsoo Han
, et al.
·
Asia and South Pacific Design Automation Conference (ASP-DAC)
·
4
2.5nsバンクツーバンクアクティブ時間を持ちバンクグループ制限の無い7Gb/s/pin GDDR5 SDRAM
2010
·
Tae-Young Oh
, Young-Soo Sohn
, et al.
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
Show more works
View as search
Works count:
12
Citation count:
297
H-index:
9
I10-index:
8
Year
Topic
Type