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R.J. Van Overstraeten

Observed names: R J van Overstraeten, R. J. VAN OVERSTRAETEN, R. J. Van Overstraeten, R. J. van Overstraeten, R.J. van Overstraeten, ROGER J. VAN OVERSTRAETEN, Roger J. Van Overstraeten, Roger J. Van overstraeten, Roger J. van Overstraeten
Institution: IMEC
OpenAlex ID: A5023636166
Transport equations in heavy doped silicon
1973 · R.J. Van Overstraeten, H.J. DeMan, et al. · IEEE Transactions on Electron Devices · 277
Theory of the MOS transistor in weak inversion-new method to determine the number of surface states
1975 · R.J. Van Overstraeten, G.J. Declerck, et al. · IEEE Transactions on Electron Devices · 179
Measurement of the minority-carrier transport parameters in heavily doped silicon
1980 · R.P. Mertens, J.L. Van Meerbergen, et al. · IEEE Transactions on Electron Devices · 102
Calculation of the emitter efficiency of bipolar transistors
1973 · R.P. Mertens, H.J. DeMan, et al. · IEEE Transactions on Electron Devices · 91
Heavy doping effects in silicon
1987 · Roger J. Van Overstraeten, Robert P. Mertens · Solid-State Electronics · 79
Inadequacy of the classical theory of the MOS transistor operating in weak inversion
1973 · R.J. Van Overstraeten, G. Declerck, et al. · IEEE Transactions on Electron Devices · 56
An analytical model for the determination of the transient response of CML and ECL gates
1990 · M.Y. Ghannam, R.P. Mertens, et al. · IEEE Transactions on Electron Devices · 47
Simple technique for determination of centroid of nitride charge in MNOS structures
1975 · H. Maes, R. J. Van Overstraeten · Applied Physics Letters · 44
Effect of surface recombination on the transient decay of excess carriers produced by short wavelength laser pulses
1982 · M.S. Tyagi, J.F. Nijs, et al. · Solid-State Electronics · 43
Theoretical calculations of the Fermi level and of other parameters in phosphorus doped silicon at diffusion temperatures
1974 · R.K. Jain, R.J. Van Overstraeten · IEEE Transactions on Electron Devices · 36
Coupling of a volumetric pump to a photovoltaic array
1985 · Wagdy R. Anis, Robert P. Mertens, et al. · Solar Cells · 35
New TiOx-MIS and Si02-MIS silicon solar cells
1978 · P. van Halen, R.P. Mertens, et al. · IEEE Transactions on Electron Devices · 35
The influence of annealing ambient on the shrinkage kinetics of oxidation-induced stacking faults in silicon
1979 · Cor L. Claeys, Gilbert J. Declerck, et al. · Applied Physics Letters · 33
Heavy Doping Effects in Silicon
1981 · Robert P. Mertens, Roger J. Van Overstraeten, et al. · Advances in electronics and electron physics · 31
Calculation of the diffusion induced stresses in silicon
1974 · R. K. Jain, R. J. van Overstraeten · physica status solidi (a) · 27
The influence of surface potential fluctuations on the operation of the MOS transistor in weak inversion
1973 · R.J. Van Overstraeten, G. Declerck, et al. · IEEE Transactions on Electron Devices · 26
Theory of thermal dielectric relaxation and direct determination of trap parameters
1974 · H M Gupta, R J van Overstraeten · Journal of Physics C Solid State Physics · 25
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Characterization of the Mosfet Operating in Weak Inversion
1978 · Paul A. Muls, Gilbert J. Declerck, et al. · Advances in electronics and electron physics · 24
Low-field transient behavior of MNOS devices
1976 · Herman E. Maes, Roger J. Van Overstraeten · Journal of Applied Physics · 23
Bandgap Narrowing and Its Effects on the Properties of Moderately and Heavily Doped Germanium and Silicon
1991 · Suresh C. Jain, R.P. Mertens, et al. · Advances in electronics and electron physics · 22
Electrical characterization of the boron-doped Si-SiO2interface
1985 · M.Y. Ghannam, R.P. Mertens, et al. · IEEE Transactions on Electron Devices · 18
Calculation of solar cell operating temperature in a flat plate PV array
1984 · Wagdy R. Anis, R. Mertens, et al. · 18
Memory loss in MNOS capacitors
1976 · Herman E. Maes, Roger J. Van Overstraeten · Journal of Applied Physics · 18
Role of trap states in the insulator region for MIM characteristics
1975 · H. M. Gupta, R. J. Van Overstraeten · Journal of Applied Physics · 18
Band-gap narrowing in GaAs using a capacitance method
1990 · P. Van Mieghem, R. P. Mertens, et al. · Physical review. B, Condensed matter · 17
Works count: 59
Citation count: 1,474
H-index: 20
I10-index: 32
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