Work

Theory of the MOS transistor in weak inversion-new method to determine the number of surface states

Year: 1975

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/t-ed.1975.18119

Authors: R.J. Van Overstraeten, G.J. Declerck, P.A. Muls

Institution: KU Leuven

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2573182003

FWCI: 8.379

Cites: 10

Cited by: 179

Related to: 10