Author

Olaf Seifarth

Observed names: O Seifarth, O. Seifarth

Observed institutions: Christian-Albrechts-Universität zu Kiel, Brandenburg University of Technology Cottbus-Senftenberg, Leibniz Institute for High Performance Microelectronics

OpenAlex ID: A5023969140

Fermi surface of 2H−NbSe2 and its implications on the charge-density-wave mechanism

2001 · K. Rossnagel, O. Seifarth, et al. · Physical review. B, Condensed matter · 128

Microscopic model for the nonlinear behavior of high-k metal-insulator-metal capacitors

2008 · Ch. Wenger, G. Lupina, et al. · Journal of Applied Physics · 57

Metallic nickel nanorod arrays embedded into ordered block copolymer templates

2007 · O. Seifarth, R. Krenek, et al. · Thin Solid Films · 44

The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)∕Si(111) support systems

2008 · A. Giussani, O. Seifarth, et al. · Journal of Applied Physics · 35

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Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2−xO3 (x=0–2) dielectrics on TiN for dynamic random access memory applications

2007 · T. Schroeder, G. Lupina, et al. · Journal of Applied Physics · 35

Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors

2009 · T. Schroeder, A. Giussani, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 31

Engineering the semiconductor/oxide interaction for stacking twin suppression in single crystalline epitaxial silicon(111)/insulator/Si(111) heterostructures

2008 · T Schroeder, P Zaumseil, et al. · New Journal of Physics · 31

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Self-assembled Ge nanocrystals on high-k cubic Pr2O3(111)∕Si(111) support systems

2007 · T. Schroeder, I. Costina, et al. · Journal of Applied Physics · 29

Hf- and Zr-based alkaline earth perovskite dielectrics for memory applications

2009 · G. Łupina, O. Seifarth, et al. · Microelectronic Engineering · 24

On the band gaps and electronic structure of thin single crystalline praseodymium oxide layers on Si(111)

2009 · O. Seifarth, J. Dabrowski, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 24

Characterization of group II hafnates and zirconates for metal–insulator–metal capacitors

2010 · Grzegorz Lupina, Olaf Seifarth, et al. · physica status solidi (b) · 23

Improving the dielectric constant of Al2O3 by cerium substitution for high-k MIM applications

2009 · Rakesh Sohal, Grzegorz Lupina, et al. · Surface Science · 23

Tuning Dimensionality by Nanowire Adsorption on Layered Materials

2001 · R. Adelung, J. Brandt, et al. · Physical Review Letters · 22

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A novel engineered oxide buffer approach for fully lattice-matched SOI heterostructures

2010 · A Giussani, P Zaumseil, et al. · New Journal of Physics · 17

Growth of praseodymium oxide on Si(111) under oxygen-deficient conditions

2009 · A. Schaefer, V. Zielasek, et al. · Physical Review B · 17

Lattice engineering of dielectric heterostructures on Si by isomorphic oxide-on-oxide epitaxy