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J. Derrien

Observed names: DERRIEN, Jacques, Derrien, J, Derrien, J., Derrien, Jacques, J Derrien, J. DERRIEN, Jacques DERRIEN, Jacques Derrien
Observed institutions: Université Paris-Sud, University of Rome Tor Vergata, Centre National de la Recherche Scientifique, University of Sussex, Université Joseph Fourier, Aix-Marseille Université, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Université de Haute-Alsace, CEA Grenoble, Centre de Recherche en Cancérologie de Marseille, Laboratoire d'Électronique des Technologies de l'Information, Centre Interdisciplinaire de Nanoscience de Marseille, Université Aix-Marseille-III, Université de la Méditerranée Aix-Marseille II
OpenAlex ID: A5024674470
Porous Silicon Science and Technology
1995 · Jean‐Claude Vial, J. Derrien · Springer eBooks · 258
Semiconducting silicide-silicon heterojunction elaboration by solid phase epitaxy
1989 · N. Cherief, C. D’Anterroches, et al. · Applied Physics Letters · 173
Direct observation of the nucleation and growth modes of Ag/Si(111)
1980 · J.A. Venables, J. Derrien, et al. · Surface Science · 168
Semiconducting silicide-silicon heterostructures: growth, properties and applications
1992 · J. Derrien, J. Chevrier, et al. · Applied Surface Science · 150
Catalytic action of gold atoms on the oxidation of Si(111) surfaces
1981 · A. Cros, J. Derrien, et al. · Surface Science · 124
Cobalt disilicide epitaxial growth on the silicon (111) surface
1984 · C. Pirri, J. C. Peruchetti, et al. · Physical review. B, Condensed matter · 120
Initial interaction of oxygen with aluminium single crystal faces: A LEED, AES and work function study
1980 · R. Michel, J. Gastaldi, et al. · Surface Science · 107
A RHEED Study of Epitaxial Growth of Iron on a Silicon Surface: Experimental Evidence for Kinetic Roughening
1991 · J Chevrier, V. Le Thanh, et al. · Europhysics Letters (EPL) · 106
Adsorption of cesium on gallium arsenide (110)
1977 · Jacques Derrien, François Arnaud D'avitaya · Surface Science · 91
Epitaxial growth of Fe-Si compounds on the silicon (111) face
1992 · Le Thanh Vinh, J. Chevrier, et al. · Physical review. B, Condensed matter · 86
Epitaxial growth of Mn5Ge3/Ge(111) heterostructures for spin injection
2008 · S. Olive-Mendez, A. Spiesser, et al. · Thin Solid Films · 83
Epitaxial growth of β-FeSi2 on silicon (111): a real-time RHEED analysis
1992 · J. Chevrier, V. Le Thanh, et al. · Applied Surface Science · 82
Infrared and Raman characterization of beta iron silicide
1991 · K. Lefki, P. Muret, et al. · Solid State Communications · 82
Surface electron-diffraction patterns of β-FeSi2 films epitaxially grown on silicon
1993 · John E. Mahan, V. Le Thanh, et al. · Journal of Applied Physics · 79
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Control of magnetic properties of epitaxial Mn 5 Ge 3 C x films induced by carbon doping
2011 · A. Spiesser, I. Slipukhina, et al. · Physical Review B · 75
Formation and properties of the copper silicon(111) interface
1983 · F. Ringeisen, J. Derrien, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 68
Kinetics of formation and properties of epitaxial CoSi2 films on Si (111)
1985 · F. Arnaud D’Avitaya, S. Delage, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 65
Structural and electronic properties of CoSi2 epitaxially grown on Si(111)
1986 · J. Derrien · Surface Science · 64
Thin metallic silicide films epitaxially grown on Si(111) and their role in Si–metal–Si devices
1987 · J. Derrien, F. Arnaud d’Avitaya · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 62
Epitaxial Growth of α-FeSi 2 on Si(111) at Low Temperature
1993 · J Chevrier, P Stocker, et al. · Europhysics Letters (EPL) · 59
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Bremsstrahlung-isochromat-spectroscopy and x-ray-photoelectron-spectroscopy investigation of the electronic structure of β- FeSi2 and the Fe/Si(111) interface
1990 · M. De Crescenzi, G. Gaggiotti, et al. · Physical review. B, Condensed matter · 56
Co/Si(111) interface: Formation of an initial CoSi2 phase at room temperature
1987 · J. Y. Veuillen, J. Derrien, et al. · Applied Physics Letters · 56
Low temperature formation of Si(111)7×7 surfaces from chemically prepared H/Si(111)-(1×1) surfaces
1994 · Le Thanh Vinh, M. Eddrief, et al. · Applied Physics Letters · 55
Local structure determination of the CoSi(111) interface by surface electron energy-loss fine-structure technique
1986 · E. Chaînet, M. De Crescenzi, et al. · Surface Science · 54
Heteroepitaxy of metallic and semiconducting silicides on silicon
1990 · N. Cherief, R. Cinti, et al. · Applied Surface Science · 50
Works count: 166
Citation count: 4,099
H-index: 35
I10-index: 90
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