Author

Johannes Baumgartl

Observed name: J. Baumgartl

Institution: Infineon Technologies (Austria)

Observed institutions: Infineon Technologies (Germany), Infineon Technologies (Austria)

OpenAlex ID: A5024678515

On mechanisms governing AlN and AlGaN growth rate and composition in large substrate size planetary MOVPE reactors

2013 · Martin Dauelsberg, Daniel Brien, et al. · Journal of Crystal Growth · 17

A novel trench concept for the fabrication of compensation devices

2004 · M. Rub, D. Ahlers, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 16

A novel SIMS based approach to the characterization of the channel doping profile of a trench MOSFET

2007 · R. Zelsacher, A.C.G. Wood, et al. · Microelectronics Reliability · 7

Multiple epitaxial Si film deposition by APCVD for power semiconductors

2015 · Matthias Kunle, Johannes Baumgartl, et al. · ASMC proceedings · 5

Uniformity improvement for 200 mm APCVD epitaxial Si film by retrofit of Applied Materials Epi Centura

2014 · Matthias Kunle, Johannes Baumgartl, et al. · ASMC proceedings · 5

Resistivity measurement of epitaxially grown silicon layers: The influence of native oxide growth

2008 · Th. Bitzer, J. Baumgartl, et al. · ASMC proceedings · 2

Application of a Run-to-Run controller to a vapor phase epitaxy process

2009 · C. De Luca, E. Maran, et al. · ASMC proceedings · 1

Enhanced Equipment and New Processes As Enabler for Power Technologies on 300mm Substrates

2015 · Manfred Engelhardt, Johannes Baumgartl, et al. · ECS Meeting Abstracts