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Christoph Schwan
Observed names:
C. Schwan,
Schwan, Christoph
Observed institutions:
GlobalFoundries (United States),
Advanced Micro Devices (United States),
GlobalFoundries (Germany)
OpenAlex ID:
A5026809682
A 22nm FDSOI Technology Optimized for RF/mmWave Applications
2018
·
S.N. Ong
, S. Lehmann
, et al.
·
Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium
·
148
RF-pFET in fully depleted SOI demonstrates 420 GHz FT
2017
·
Josef Watts
, Kumaran Sundaram
, et al.
·
Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium
·
13
High-resistivity with PN interface passivation in 22 nm FD-SOI technology for low-loss passives at RF and millimeter-wave frequencies
2023
·
L. Nyssens
, M. Rack
, et al.
·
Solid-State Electronics
·
12
Impact of substrate resistivity on spiral inductors at mm-wave frequencies
2022
·
Lucas Nyssens
, Martin Rack
, et al.
·
Solid-State Electronics
·
11
Demonstration and Modelling of Excellent RF Switch Performance of 22nm FD-SOI Technology for Millimeter-Wave Applications
2019
·
S. Yadav
, A. Bellaouar
, et al.
·
European Solid-State Device Research Conference
·
11
22-nm FDSOI CMOS Noise Modeling and Analysis in mm-Wave Frequency Range
2023
·
Quang Huy Le
, Dang Khoa Huynh
, et al.
·
IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
·
10
A 2.5-2.6 dB Noise Figure LNA for 39 GHz band in 22 nm FD-SOI with Back-Gate Bias Tunability
2022
·
L. Nyssens
, M. Rack
, et al.
·
European Microwave Integrated Circuits Conference
·
9
High-Resistivity Substrates with PN Interface Passivation in 22 nm FD-SOI
2022
·
M. Rack
, L. Nyssens
, et al.
·
International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
·
9
Sub-50nm gate length SOI transistor development for high performance microprocessors
2004
·
M. Horstmann
, D. Greenlaw
, et al.
·
Materials Science and Engineering B
·
9
PN Junctions Interface Passivation in 22 nm FDSOI for Low-Loss Passives
2022
·
L. Nyssens
, M. Rack
, et al.
·
International Conference on Microwaves, Radar & Wireless Communications
·
4
CMOS RF performance gain by gate resistance optimization
2016
·
Christoph Schwan
, Kok Wai Johnny Chew
, et al.
·
Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium
·
3
A Plasma Damage Mitigation Concept for SOI Technologies: Lightning Rods
2007
·
Mario M. Pelella
, JR Zhou
, et al.
·
IEEE International SOI Conference (SOI)
·
3
Low Power FDSOI Technology and Devices for RF Applications
2016
·
Christoph Schwan
, Kok Wai Chew
, et al.
·
ECS Transactions
·
2
PDF
Advanced transistor structures for high performance microprocessors
2004
·
M. Horstmann
, D. Greenlaw
, et al.
·
IEEE International Conference on IC Design and Technology (ICICDT)
·
2
Combining Embedded and Overlayer Compressive Stressors in Advanced SOI CMOS Technologies
2007
·
A. Wei
, T. Kammler
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
·
1
Low Power FDSOI Technology and Devices for RF Applications
2016
·
Christoph Schwan
, Kok Wai Chew
, et al.
·
ECS Meeting Abstracts
High Performance SOI Technology for Sub-45nm Gate Length CMOS Manufacturing
2006
·
Manfred Horstmann
, David Greenlaw
, et al.
·
ECS Meeting Abstracts
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Works count:
19
Citation count:
247
H-index:
9
I10-index:
6
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