Work

High-resistivity with PN interface passivation in 22 nm FD-SOI technology for low-loss passives at RF and millimeter-wave frequencies

Year: 2023

Type: article

Source: Solid-State Electronics

DOI: 10.1016/j.sse.2023.108656

Authors: L. Nyssens, M. Rack, M. Nabet, C. Schwan, Z. Zhao, S. Lehmann, T. Herrmann, D. Henke, A. Kondrat, C. Soonekindt, F. Koch, T. Kache, D.P. Kini, O. Zimmerhackl, F. Allibert, C. Aulnette, D. Lederer, J.-P. Raskin

Institutions: UCLouvain, GlobalFoundries (Germany), Soitec (France)

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W4366609135

FWCI: 0.855

Cites: 23

Cited by: 12

Related to: 10