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Cécile Aulnette

Observed names: Aulnette, C., C Aulnette, C. Aulnette, Cecile Aulnette
OpenAlex ID: A5111989208
Engineering strained silicon on insulator wafers with the Smart CutTM technology
2004 · B. Ghyselen, J.-M. Hartmann, et al. · Solid-State Electronics · 123
Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS
2012 · A. Khakifirooz, K. Cheng, et al. · Symposium on VLSI Technology · 42
High-resistivity with PN interface passivation in 22 nm FD-SOI technology for low-loss passives at RF and millimeter-wave frequencies
2023 · L. Nyssens, M. Rack, et al. · Solid-State Electronics · 12
Ultra-Thin Film SOI/BOX Substrate Development, Its Application and Readiness
2011 · Walter Schwarzenbach, Xavier Cauchy, et al. · ECS Transactions · 12
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Impact of substrate resistivity on spiral inductors at mm-wave frequencies
2022 · Lucas Nyssens, Martin Rack, et al. · Solid-State Electronics · 11
Modeling and direct extraction of band offset induced by stress engineering in silicon-on-insulator metal-oxide-semiconductor field effect transistors: Implications for device reliability
2009 · X. Garros, F. Rochette, et al. · Journal of Applied Physics · 11
Highly-Strained Silicon-On-Insulator Development
2006 · Takeshi Akatsu, Jean-Michel Hartmann, et al. · ECS Transactions · 11
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Stress Metrology : The challenge for the next generation of engineered wafers
2004 · Antoine Tiberj, Vincent Paillard, et al. · MRS Proceedings · 10
High-Resistivity Substrates with PN Interface Passivation in 22 nm FD-SOI
2022 · M. Rack, L. Nyssens, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 9
Overview of FDSOI technology from substrate to device
2009 · Bich-Yen Nguyen, Carlos Mazure, et al. · International Semiconductor Device Research Symposium · 9
Dual strained channel CMOS in FDSOI architecture: New insights on the device performance
2011 · C. Le Royer, M. Cassé, et al. · Solid-State Electronics · 8
SiGe and Ge on Insulator Wafers
2011 · Nicolas Daval, Christophe Figuet, et al. · ECS Transactions · 5
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Dual channel and strain for CMOS co-integration in FDSOI device architecture
2010 · C. Le Royer, M. Casse, et al. · European Solid-State Device Research Conference · 5
Splitting kinetics of Si0.8Ge0.2 layers implanted with H or sequentially with He and H
2008 · Phuong Nguyen, K. K. Bourdelle, et al. · Journal of Applied Physics · 5
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Strain characterization of strained silicon on insulator wafers
2004 · V Paillard, B Ghyselen, et al. · Microelectronic Engineering · 5
PN Junctions Interface Passivation in 22 nm FDSOI for Low-Loss Passives
2022 · L. Nyssens, M. Rack, et al. · International Conference on Microwaves, Radar & Wireless Communications · 4
Ultra Thin silicon substrate for next generation technology nodes
2010 · W. Schwarzenbach, Xavier Cauchy, et al. · IEEE International Symposium on Semiconductor Manufacturing conference proceedings · 4
Ultra-thin SOI for 20nm node and beyond
2011 · C. Aulnette, W. Schwarzenbach, et al. · IEEE International SOI Conference (SOI) · 1
SiGe and Ge on Insulator Wafers
2011 · Nicolas Daval, Charlotte Drazek, et al. · ECS Meeting Abstracts · 1
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Strained Silicon On Insulator wafers made by the Smart Cut™ technology
2004 · B. Ghyselen, Y. Bogumilowicz, et al. · MRS Proceedings · 1
High Ge content Si / SiGe heterostructures for microelectronics and optoelectronics purposes
2004 · Bogumilowicz, Y., Hartmann, J.M., et al. · HAL · 1
SSROI (super-steep retrograde on insulator) substrates for RF switch and LNA device performance enhancement
2024 · Hideki Takeuchi, Robert J. Stephenson, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
Ultra-Thin Film SOI/BOX Substrate Development, Its Application and Readiness
2011 · Walter Schwarzenbach, Xavier Cauchy, et al. · ECS Meeting Abstracts
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On the Mechanism of the Smart Cut Layer Transfer in Relaxed SiGe Layers
2006 · Phuong Nguyen, C. Aulnette, et al. · ECS Meeting Abstracts
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Smart Cut Technology: The Path for Advanced SOI Substrates
2005 · H. Moriceau, C. Lagahe-Blanchard, et al. · NATO science series. Series II, Mathematics, physics and chemistry
Works count: 25
Citation count: 290
H-index: 9
I10-index: 8
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