Dual strained channel CMOS in FDSOI architecture: New insights on the device performance
Year: 2011
Type: article
Source: Solid-State Electronics
Institutions: Université Grenoble Alpes, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, European Automobile Manufacturers Association, CEA Grenoble, Laboratoire d'Électronique des Technologies de l'Information, STMicroelectronics (Switzerland), Centre National de la Recherche Scientifique, Institut polytechnique de Grenoble, Soitec (France), Institut d'Électronique et des Systèmes
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1997441504