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Manuela Finetti

Precipitation as the phenomenon responsible for the electrically inactive phosphorus in silicon
1982 · D. Nobili, A. Armigliato, et al. · Journal of Applied Physics · 139
Electrical Properties and Stability of Supersaturated Phosphorus‐Doped Silicon Layers
1981 · M. Finetti, P. Negrini, et al. · Journal of The Electrochemical Society · 72
Metal/semiconductor contact resistivity and its determination from contact resistance measurements
1988 · Andrea Scorzoni, Manuela Finetti · Materials Science Reports · 70
Electrical characteristics of thin Ni2Si, NiSi, and NiSi2 layers grown on silicon
1983 · E. G. Colgan, M. Mäenpää, et al. · Journal of Electronic Materials · 68
Lateral current crowding effects on contact resistance measurements in four terminal resistor test patterns
1984 · M. Finetti, A. Scorzoni, et al. · IEEE Electron Device Letters · 58
Electrical properties of thin Co2Si, CoSi, and CoSi2 layers grown on evaporated silicon
1984 · C. -D. Lien, M. Finetti, et al. · Journal of Electronic Materials · 49
Aluminum-silicon ohmic contact on “shallow” junctions
1980 · M. Finetti, P. Ostoja, et al. · Solid-State Electronics · 45
Schottky barrier height of sputtered TiN contacts on silicon
1984 · M. Finetti, I. Suni, et al. · Solid-State Electronics · 34
Current crowding and misalignment effects as sources of error in contact resistivity measurements—Part I: Computer simulation of conventional CER and CKR structures
1987 · A. Scorzoni, M. Finetti, et al. · IEEE Transactions on Electron Devices · 30
Influence of impurities and crystalline defects on electron mobility in heavily doped silicon
1979 · M. Finetti, R. Galloni, et al. · Journal of Applied Physics · 30
Ion-implanted, electron-beam annealed TiN films as diffusion barriers for Al on Si shallow junctions
1985 · A. Armigliato, M. Finetti, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 29
Contact resistivity of silicon/silicide structures formed by thin film reactions
1985 · M. Finetti, S. Guerri, et al. · Thin Solid Films · 25
Self-annealed ion implanted n+-p diodes
1982 · G. Cembali, M. Finetti, et al. · Applied Physics Letters · 25
The effect of sheet resistance modifications underneath the contact on the extraction of the contact resistivity: application to the cross Kelvin resistor
1988 · A. Scorzoni, M. Finetti · IEEE Transactions on Electron Devices · 19
Titanium nitride as a diffusion barrier between nickel silicide and aluminum
1984 · M. Finetti, I. Suni, et al. · Journal of Electronic Materials · 19
Finite metal-sheet-resistance in contact resistivity measurements: Application to Si/TiN contacts
1983 · M. Finetti, I. Suni, et al. · Solid-State Electronics · 19
Current crowding and misalignment effects as sources of error in contact resistivity measurements—Part II: Experimental results and computer simulation of self-aligned test structures
1987 · P. Cappelletti, M. Finetti, et al. · IEEE Transactions on Electron Devices · 13
Comparison of experimental and theoretical carrier concentrations in heavily doped n-type silicon
1976 · M. Finetti, A. M. Mazzone, et al. · Journal of Applied Physics · 12
Electrical characteristics of amorphous iron-tungsten contacts on silicon
1983 · M. Finetti, E. T-S. Pan, et al. · Applied Physics Letters · 11
Contact resistivity of TiN on p+-Si and n+-Si
1983 · Manuela Finetti, Ilkka Suni, et al. · Solar Cells · 10
Correlation between resistance behavior and mass transport in Al–Si/Ti multilayer interconnects
1987 · M. Finetti, I. Suni, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 9
Ion-implanted TiN films as diffusion barriers in silicon device technology
1985 · A. Armigliato, M. Finetti, et al. · Thin Solid Films · 9
Impurity effects on conduction in heavily doped n-type silicon
1977 · M. Finetti, A. M. Mazzone · Journal of Applied Physics · 9
Stable Metallization Systems for Solar Cells
1982 · M. Mäenpää, I. Suni, et al. · physica status solidi (a) · 7
Predeposition through a polysilicon layer as a tool to reduce anomalies in phosphorus profiles and the push-out effect in n-p-n transistors
1980 · M. Finetti, G. Masetti, et al. · IEE Proceedings I Solid State and Electron Devices · 7
Works count: 54
Citation count: 883
H-index: 16
I10-index: 20
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